10.0-18.0 GHz GaAs ReceiverQFN, 7x7 mmJuly 2006 - Rev 14-Jul-06
R1007-QDFeatures
Integrated LNA, LO Buffer, Image Reject Mixer7x7 mm, QFN
+2.0 dBm LO Drive Level2.7 dB Noise Figure
20.0 dB Image Rejection
100% RF, DC and Noise Figure Testing
General Description
Mimix Broadband’s 10.0-18.0 GHz GaAs packaged receiver has a noise figure of 2.7 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum RatingsSupply Voltage (Vd)Supply Current (Id1,Id2)Gate Bias Voltage (Vg)Input Power (RF Pin)Storage Temperature (Tstg)Operating Temperature (Ta)Channel Temperature (Tch)+5.0 VDC200, 250 mA+0.3 VDC+17 dBm
-65 to +165 OC-55 to MTTF Table3MTTF Table3
(3) Channel temperature affects a device's MTTF. It isrecommended to keep channel temperature as low aspossible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)ParameterFrequency Range (RF) Upper Side BandFrequency Range (LO)Frequency Range (IF)
Input Return Loss RF (S11)Small Signal Conversion Gain RF/IF (S21)2LO Input Drive (PLO)Image Rejection2Noise Figure (NF)2
Isolation LO/RF @ LOx1/LOx2Input Third Order Intercept (IIP3)1,2Drain Bias Voltage (Vd1)Drain Bias Voltage (Vd2)Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)UnitsGHzGHzGHzdBdBdBmdBcdBdBdBmVDCVDCVDCmAmA
Min.10.08.0DC----------1.2--Typ.---15.015.0+2.020.02.740.0+4.0+4.0+4.0-0.380100
Max.18.020.04.0-------+4.5+4.5+0.1120150
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
元器件交易网www.cecb2b.com
10.0-18.0 GHz GaAs ReceiverQFN, 7x7 mmJuly 2006 - Rev 14-Jul-06
R1007-QDReceiver Measurements
XR1007-QD, Conversion Gain (dB)201816Conversion Gain (dB)14121086420101112131415RF (GHz) [IF=2GHz]161718USBLSBImage Rejection (dBc)0-5-10-15-20-25-30-35-40101112131415RF (GHz) [IF=2GHz]161718USBLSBXR1007-QD, Image Rejection (dBc)XR1007-QD, Input P1dB (dBm)0-1-2Input P1dB (dBm)-3NF (dB)-4-5-6-7-8-9-10USBLSB5.04.54.03.53.02.52.01.51.00.50.0XR1007-QD, Noise Figure (dB)USBLSB101112131415RF (GHz) [IF=2GHz]161718101112131415161718RF (GHz) [IF=2GHz]Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
元器件交易网www.cecb2b.com
10.0-18.0 GHz GaAs ReceiverQFN, 7x7 mmJuly 2006 - Rev 14-Jul-06
R1007-QDPhysical DimensionsRecommended LayoutLO INtIF1 OutIF2 Ou(Note: Engineering designator is 14REC0742)Functional DiagramIF2_OUTVG310 nFVG3VG4441434241VG4VD340393837VG1&23635343332313029GNDRFIN
VD110 nFRFINVG1&2234GND5678910LOBufferPin DesignationsPinPin NameNumber5GND6LO in7GND15VD317IF119VD127GND28RF In29GND36VG1, 239IF241VG443VG3All other pins N/C
Pin FunctionNominalValue+2.04.04.0UnitdBmVVIF1_OUTVD3VD1GroundLO inputGroundLO Buffer Drain BiasIF1 OutputLNA Drain BiasGroundRF inputGroundLNA Gate BiasIF2 outputMixer Gate BiasLO Buffer Gate BiasLOINGNDImageRejectMixerLNALNA2827262524GND
-0.3-0.5-0.1VVV111213141516171819XR1007-QD23222021Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
元器件交易网www.cecb2b.com
10.0-18.0 GHz GaAs ReceiverQFN, 7x7 mmJuly 2006 - Rev 14-Jul-06
R1007-QDApp Note [1] Biasing - The device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=80mA and
Vd2=4.0V, Id2=100mA. It is also recommended to use active biasing to keep the currents constant as the RF power andtemperature vary; this gives the most reproducible results. Depending on the supply voltage available and the powerdissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low valueresistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correctdrain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protectedwith Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gatebias is available before applying the positive drain supply.MTTF1.0E+061.0E+05MTTF (years)1.0E+041.0E+031.0E+021.0E+011.0E+0055XR1007-QD, MTTF (yrs) vs. Backplate Temperature (°C)6575Temperature (°C)8595MTTF is calculated from accelerated life-time data of single devices and assumes an isothermalback-plate.Typical ApplicationXR1007-QDRF IN10.0-18.0 GHzLNAIR MixerCouplerBPFIF Out2 GHzAGC ControlLO(+2.0dBm)8.0-16.0 GHz (USB Operation)12.0-20.0 GHz (LSB Operation)
Mimix Broadband MMIC-based 10.0-18.0 GHz Receiver Block Diagram
Mimix Broadband's 10.0-18.0 GHz XR1007-QD GaAs Receiver can be used in saturated radio applications and linear modulation schemes upto 256 QAM. The receiver can be used in upper and lower sideband applications from 10.0-18.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
元器件交易网www.cecb2b.com
10.0-18.0 GHz GaAs ReceiverQFN, 7x7 mmJuly 2006 - Rev 14-Jul-06
R1007-QDApp Note [3] USB/LSB Selection -
LSB
USB
For Upper Side Band operation (USB):
With IF1 and IF2 connected to thedirect port (0º) and coupled port (90º)respectively as shown in the diagram,the USB signal will reside on theisolated port. The input port must beloaded with 50 ohms.IF2IF1For Lower Side Band operation (LSB):With IF1 and IF2 connected to thedirect port (0º) and coupled port (90º)respectively as shown in the diagram,the LSB signal will reside on the inputport. The isolated port must be loadedwith 50 ohms.An alternate method of Selection of USB or LSB:USBLSBIn Phase CombinerIn Phase Combiner-90o-90oIF2IF1IF2IF1Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
元器件交易网www.cecb2b.com
10.0-18.0 GHz GaAs ReceiverQFN, 7x7 mmJuly 2006 - Rev 14-Jul-06
R1007-QDCAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and theenvironment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as theseby-products are dangerous to the human body if inhaled, ingested, or swallowed.Observe government laws and company regulations when discarding this product. This product must be discarded inaccordance with methods specified by applicable hazardous waste procedures.Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices orsystems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Lifesupport devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustainlife, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can bereasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect itssafety or effectiveness.Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatiblewith high volume solder installation. The package is a low-cost plastic package. Vacuum tools or other suitable pick and placeequipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solderconnection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RFperformance degradation, but reduced reliability and life of the product due to thermal stress.Reflow ProfileRamp Up RateActivation Time and TemperatureTime Above Melting PointMax Peak TemperatureTime Within 5 ºC of PeakRamp Down RateSnPb3-4 ºC/sec60-120 sec @ 140-160 ºC60-150 sec240 ºC10-20 sec4-6 ºC/secPb Free3-4 ºC/sec60-180 sec @ 170-200 ºC60-150 sec265 ºC10-20 sec4-6 ºC/secMimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmentalrequirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliantcomponents are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is100% matt tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes aswell as higher temperature (260°C reflow) “Pb Free” processes.Part Number for Ordering DescriptionXR1007-QD-0N00 Ni/Au plated RoHS compliant QFN 7x7 44L surface mount package in bulk quantityXR1007-QD-0N0T Ni/Au plated RoHS compliant QFN 7x7 44L surface mount package in tape and reelXR1007-QD-EV1 XR1007-QD Evaluation Module
We also offer this part with alternative plating options. Please contact your regional sales manager for more information regardingdifferent plating types.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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