QUANTUM DOT INFRARED PHOTODETECTOR

专利名称：QUANTUM DOT INFRARED

PHOTODETECTOR

发明人：Toshihiro Okamura,Mitsuhiro

Nagashima,Michiya Kibe,Ryo Suzuki,YasuhitoUchiyama,Hironori Nishino

申请号：US12534220申请日：20090803

公开号：US20100032651A1公开日：20100211

专利附图：

摘要：A quantum dot infrared photodetector includes a quantum dot structure

including intermediate layers, and a quantum dot layer sandwiched between theintermediate layers and including quantum dots whose energy potential is low forcarriers, the intermediate layers and the quantum dots being formed of a III-V compoundsemiconductor with the V element being As, and an AlAs layer being provided on one ofthe interfaces between the intermediate layers and the quantum dot layer including thequantum dots and covering at least the quantum dots.

申请人：Toshihiro Okamura,Mitsuhiro Nagashima,Michiya Kibe,Ryo Suzuki,YasuhitoUchiyama,Hironori Nishino

地址：Shibuya JP,Suginami JP,Sagamihara JP,Kawasaki JP,Kawasaki JP,Kawasaki JP

国籍：JP,JP,JP,JP,JP,JP

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