New Product
Si1403BDL
Vishay Siliconix
S
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)- 20
rDS(on) (Ω)0.150 at VGS = - 4.5 V 0.175 at VGS = - 3.6 V 0.265 at VGS = - 2.5 V
ID (A)- 1.5- 1.4- 1.2
2.9Qg (Typ)
FEATURES
•TrenchFET® Power MOSFET
RoHSCOMPLIANTSOT-363SC-70 (6-LEADS)D165DMarking CodeODXXYYLot Traceabilityand Date CodePart # CodeTop ViewD2DG34SOrdering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)aPulsed Drain Current
Continuous Diode Current (Diode Conduction)aMaximum Power Dissipation
a
Symbol VDSVGS
TA = 25 °CTA = 85 °C
IDIDMIS
TA = 25 °CTA = 85 °C
PDTJ, Tstg
5 s
- 20
Steady State ± 12
Unit V
- 1.5- 1.2
- 5
- 0.80.6250.400
- 55 to 150
- 1.4- 1.0- 0.80.5680.295
W°CA
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-AmbientaMaximum Junction-to-Foot (Drain)Notes:
a. Surface Mounted on 1\" x 1\" FR4 Board.
t ≤ 5 sSteady StateSteady State
RthJARthJF
165180105
200220130
°C/W
Parameter ymbol TypicalMaximumUnit Document Number: 73253S-71951-Rev. B, 10-Sep-07www.vishay.com
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New Product
Si1403BDL
Vishay Siliconix
SPECIFICATIONS TJ = 25°C, unless otherwise noted
Static
Gate Threshold VoltageGate-Body Leakage
Zero Gate Voltage Drain CurrentOn-State Drain Currenta
Drain-Source On-State ResistanceaForward TransconductanceaDiode Forward VoltageaDynamicb
Total Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time
Turn-Off Delay TimeFall Time
Source-Drain Reverse Recovery TimeBody Diode Reverse Recovery Charge
Qg Qgs Qgd Rgtd(on) trtd(off) tftrrQrr
IF = - 0.8 A, di/dt = 100 A/µsVDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
f = 1.0 MHz
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A
290.651.0913302813124
20454220258
nCnsΩ
4.5
nC
VGS(th) IGSSIDSSID(on) rDS(on) gfs VSD
VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.5 A VGS = - 3.6 V, ID = - 1.4 A VGS = - 2.5 V, ID = - 0.8 A VDS = - 10 V, ID = - 1.5 A IS = - 0.8 A, VGS = 0 V
- 2
0.1200.1400.2203.4- 0.8
- 1.10.1500.1750.265
SVΩ
- 0.6
- 1.3- 1- 5
V
± 100 nA
µAA
Parameter ymbol Test Conditions Min TypMaxUnit Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.S
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted4.0VGS = 5 thru 2.5 V3.23.2ID-Drain Current (A)4.0TC = - 55 °C25 °CID-Drain Current (A)125 °C2.42.42 V1.61.60.81.5 V1, 0.5 V0.81.62.43.24.00.80.00.00.00.00.51.01.52.02.53.0VDS -Drain-to-Source Voltage (V)VGS - Gate-to-Source Voltage (V)Output CharacteristicsTransfer Characteristics
www.vishay.com2Document Number: 73253S-71951-Rev. B, 10-Sep-07
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New Product
Si1403BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted0.40500rDS(on)-On-Resistance (Ω)0.32VGS = 2.5 V0.24C - Capacitance (pF)400300Ciss0.16VGS = 3.6 V200Coss0.08VGS = 4.5 V100Crss0.00012ID -Drain Current (A)340048121620VDS -Drain-to-Source Voltage (V)On-Resistance vs. Drain Current
5VGS-Gate-to-Source Voltage (V)VDS = 10 VID = 1.5 A4rDS(on) -On-Resistance(Normalized)1.6VGS = 4.5 VID = 1.5 A1.4Capacitance
31.221.010.800.00.51.01.52.02.53.00.6-50-250255075100125150Qg -Total Gate Charge (nC)TJ -Junction Temperature (°C)Gate Charge0.40TJ = 150 °CrDS(on)-On-Resistance (Ω)IS-Source Current (A)0.350.300.250.200.150.100.050.10.00.000.30.60.91.21.50On-Resistance vs. Junction Temperature
101ID = 0.8 AID = 1.5 ATJ = 25 °C12345VSD -Source-to-Drain Voltage (V)VGS -Gate-to-Source Voltage (V)Source-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source VoltageDocument Number: 73253
S-71951-Rev. B, 10-Sep-07www.vishay.com
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New ProductSi1403BDLVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted0.50.40.3VGS(th)Variance (V)0.20.10.0-0.12-0.2-0.3- 50010-28ID = 250 µAPower (W)6104- 25025507510012515010-11Time (s)10100TJ - Temperature (°C)Threshold Voltage10Limited byrDS(on)*Single Pulse Power, Junction-to-Ambient1ID-Drain Current (A)10 µs 100 µs 1 ms10 ms0.1100 ms1 s, 100 s, DC0.01TA = 25 °CSingle Pulse0.0010.1110100 -Drain-to-Source Voltage (V)VDS* VGS> minimum VGS at which rDS(on) is specifiedSafe Operating Area21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.0110-410-310-210-11Square Wave Pulse Duration (s)Notes:PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 180 °C/W3. TJM - TA = PDMZthJA(t)4. Surface Mounted10100600Normalized Thermal Transient Impedance, Junction-to-Ambientwww.vishay.com4Document Number: 73253S-71951-Rev. B, 10-Sep-07
元器件交易网www.cecb2b.com
New Product
Si1403BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.0110-410-310-210-1Square Wave Pulse Duration (s)110Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?73253.
Document Number: 73253S-71951-Rev. B, 10-Sep-07www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
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Document Number: 91000Revision: 18-Jul-08
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