Electrochemical plating apparatus and method

专利名称：Electrochemical plating apparatus and

method

发明人：Ji Ho Hong申请号：US11317715申请日：20051222

公开号：US20060137989A1公开日：20060629

专利附图：

摘要：An apparatus and a method for electrochemical plating form a metallic layer ona substrate having a seed layer. The apparatus includes an electrochemical cell containingan electrolyte solution; a plurality of bodies arranged in the electrochemical solution to

form an anode; a substrate having a seed layer thereon, the substrate disposed in theelectrochemical cell opposite the anode, such that the anode and the seed layer areseparated by an ion travel distance; and a distance controller for independently driving atleast one of the plurality of bodies to control the ion travel distance, thereby enablinguniformity control of the metallic layer formed on the substrate by independentlyadjusting distances between the substrate and respective bodies constituting the anode.The method is applicable to the formation of a metallic layer on a large-scale wafer, sothat uniformity of an electrochemical metal layer for semiconductor devices having asmall feature size can be advantageously controlled.

申请人：Ji Ho Hong

地址：Sowon-city KR

国籍：KR

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