专利名称：High frequency integrated circuits发明人：Yinon Degani,Charley Chunlei Gao,Huainan
Ma,King Lien Tai
申请号：US11411307申请日：20060426
公开号：US20060197182A1公开日：20060907
专利附图：
摘要：The specification describes a silicon-on-silicon interconnection arrangement toimplement high performance RF impedance matching using off-chip passive components.The RF sections of the system are dis-integrated into separate RF functional chips, andthe functional chips are flip-chip mounted on a high resistivity silicon intermediateinterconnect substrate (SIIS). The passive devices for the impedance matching networksare built into the high resistivity SIIS using thin-film technology.
申请人：Yinon Degani,Charley Chunlei Gao,Huainan Ma,King Lien Tai
地址：Highland Park NJ US,San Diego CA US,Plano TX US,Berkeley Heights NJ US
国籍：US,US,US,US
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