2SB857L-C-T6C-K资料

UNISONIC TECHNOLOGIES CO., LTD 2SB857 SILICON PNP TRANSISTOR 󰂄 DESCRIPTION Low frequency power amplifier. PNP SILICON TRANSISTOR 1TO-126C 1TO-252*Pb-free plating product number: 2SB857L󰂄 ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SB857-x-T6C-K 2SB857L-x-T6C-K TO-126C E CB Bulk 2SB857-x-TN3-R 2SB857L-x-TN3-R TO-252 B CE Tape Reel 2SB857-x-TN3-T 2SB857L-x-TN3-T TO-252 B CE Tube 2SB857L-x-T6C-K(1)Packing Type(2)Package Type(3)Rank(4)Lead Plating(1) K: Bulk, R: Tape Reel, T: Tube(2) T6C: TO-126C, TN3: TO-252(3) x: refer to Classification of hFE2(4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R217-206,C 元器件交易网www.cecb2b.com

2SB857 󰂄 ABSOLUTE MAXIMUM RATING (Ta=25󰄊) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltages VCBO -130 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current IC -4 A Collector Current (IC Peak) IC(PEAK) -8 A TO-126C 1.5 W Total Power Dissipation PD TO-252 1.9 W Junction Temperature TJ +150 󰄊 Storage Temperature TSTG -40 ~ +150 󰄊 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 ELECTRICAL CHARACTERISTICS (Ta=25󰄊) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITCollector-Base Breakdown Voltage BVCBOIC=-10µA, IE=0 -130 V Collector-Emitter Breakdown Voltage BVCEOIC=-50mA, IB=0 -100 V Emitter-Base Breakdown Voltage BVEBOIE=-10µA, IC=0 -5 V Collector-Emitter Saturation Voltage *VCE(SAT)IC=-2A, IB=-0.2A -1 V Base-Emitter Saturation Voltage *VBE(ON)VCE=-4V, IC=-1A -1 V Collector Cut-off Current ICBO VCB=-130V, IC=0 -1 µA *hFE1 VCE=-4V, IC=-0.1A 35 DC Current Gain 60 320 *hFE2 VCE=-4V, IC=-1A Transition Frequency fT VCE=-4V, IC=-500mA, f=100MHz 15 MHzNote *Pulse Test: Pulse Width󰃙380µS, Duty Cycle󰃙2%. 󰂄 CLASSIFICATION OF hFE2 CLASSIFICATION B RANGE 60 ~ 120 C D 100 ~ 200 160 ~ 320 www.unisonic.com.tw QW-R217-206,C UNISONIC TECHNOLOGIES CO., LTD 2 of 4 元器件交易网www.cecb2b.com

2SB857 󰂄 TYPICAL CHARACTERISTICS 1000hFEvs. Collector Current

hFE@ VCE=4VSaturation Voltage (mV)10000PNP SILICON TRANSISTOR Saturation Voltage vs. Collector Current

1001000VBE(SAT)@ IC=10IBhFE10100VBE (SAT)@ IC=10IB11

10

1000100

Collector Current (mA)

10000101101000100Collector Current (mA)

10000 10000On Voltage vs. Collector Current1000Capacitance vs. Reverse-Biased VoltageOn Voltage (mV)1000VBE(ON)@ VCE=4VCapacitance (pF)100Cob1001101001000Collector Current (mA)1000010110Reverse-Biased Voltage (V)100 10PT=1msSafe Operating AreaCollector Current, IC(A)1PT=1sPT=100ms0.11101001000Forward Voltage, VCE(V) www.unisonic.com.tw QW-R217-206,C UNISONIC TECHNOLOGIES CO., LTD 3 of 4 元器件交易网www.cecb2b.com

2SB857 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw QW-R217-206,C UNISONIC TECHNOLOGIES CO., LTD 4 of 4