专利名称:Structure of a structure release and a
method for manufacturing the same
发明人:Wen-Jian Lin,Hsiung-Kuang Tsai申请号:US10725585申请日:20031203公开号:US06870654B2公开日:20050322
专利附图:
摘要:A structure of a structure release and a manufacturing method are provided.The structure and manufacturing method are adapted for an interference display cell.The structure of the interference display cell includes a first electrode, a second
electrode and at least one supporter. The second electrode has at least one hole and isarranged about parallel with the first electrode. The supporter is located between thefirst electrode and the second electrode and a cavity is formed. In the release etchprocess of manufacturing the structure, an etchant can pass through the hole to etch asacrificial layer between the first and the second electrodes to form the cavity; therefore,the time needed for the process becomes shorter.
申请人:Wen-Jian Lin,Hsiung-Kuang Tsai
地址:Hsinchu TW,Taipei TW
国籍:TW,TW
代理机构:Baker & Hostetler LLP
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