BQ2002E资料

2021-10-24 来源：易榕旅网

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bq2002E/GNiCd/NiMH Fast-Charge Management ICs

Features

Fastchargeofnickelcadmiumornickel-metalhydridebatter-ies

DirectLEDoutputdisplayschargestatus

Fast-chargeterminationby-∆V,maximumvoltage,maximumtemperature,andmaximumtime

Internalband-gapvoltageref-erence

Optionaltop-offcharge

Selectablepulsetricklechargerates

Low-powermode

8-pin300-milDIPor150-milSOIC

General Description

Thebq2002Eandbq2002GFast-ChargeICsarelow-costCMOSbat-tery-chargecontrollersprovidingreli-ablechargeterminationforbothNiCdandNiMHbatteryapplications.Con-trollingacurrent-limitedorcon-stant-currentsupplyallowsthebq2002E/Gtobethebasisforacost-effectivestand-aloneorsystem-inte-gratedcharger.Thebq2002E/Ginte-gratesfastchargewithoptionaltop-offandpulsed-tricklecontrolinasingleICforchargingoneormoreNiCdorNiMHbatterycells.

Fastchargeisinitiatedonapplicationofthechargingsupplyorbatteryre-placement.Forsafety,fastchargeisinhibitedifthebatterytemperatureandvoltageareoutsideconfiguredlimits.

Fastchargeisterminatedbyanyofthefollowing:

nnnnn

Peakvoltagedetection(PVD)Negativedeltavoltage(-∆V)MaximumvoltageMaximumtemperatureMaximumtime

®®

®®®®®

Afterfastcharge,thebq2002E/Gop-tionallytops-offandpulse-tricklesthebatteryperthepre-configuredlimits.FastchargemaybeinhibitedusingtheINHpin.Thebq2002E/Gmayalsobeplacedinlow-standby-powermodetoreducesystempowercon-sumption.

Thebq2002Ediffersfromthebq2002Gonlyinthataslightlydif-ferentsetoffast-chargeandtop-offtimelimitsisavailable.Alldiffer-encesbetweenthetwoICsareillus-tratedinTable1.

Pin Connections

TMLEDBATVSS1234 8765CCINHVCCTSPin Names

TMLEDBATVSS

Timer mode select inputCharging status outputBattery voltage inputSystem ground

TSVCCINHCC

TemperaturesenseinputSupply voltage inputCharge inhibit inputCharge control output

8-Pin DIP orNarrow SOICPN-200201.epsbq2002E/G Selection Guide

Part No.

LBAT

TCO0.5∗VCC0.5∗VCC

HTF0.6∗VCC0.6∗VCC

LTFNone

bq2002E0.175∗

VCCbq2002G0.175∗

VCC

-∆VPVD

Fast Charge

C/21C2CC/21C2C

tMTO20080401608040

Top-OffNoneC/16NoneNoneC/16None

Maintenance

C/32C/32C/32C/32C/32C/32

None

2/99

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bq2002E/G

Pin Descriptions

Timermodeinput

Athree-levelinputthatcontrolsthesettingsforthefastchargesafetytimer,voltageter-minationmode,top-off,pulse-trickle,andvoltagehold-offtime.

LED

Chargingoutputstatus

Open-drainoutputthatindicatesthechargingstatus.

BAT

Batteryinputvoltage

Thebatteryvoltagesenseinput.Theinputtothispiniscreatedbyahigh-impedancere-sistordividernetworkconnectedbetweenthepositiveandnegativeterminalsofthebattery.

VSSTS

Systemground

Temperaturesenseinput

Inputforanexternalbatterytemperaturemonitoringthermistor.

VCC

Supplyvoltageinput5.0V±20%powerinput.

INH

Chargeinhibitinput

Whenhigh,INHsuspendsthefastchargeinprogress.Whenreturnedlow,theICre-CC

sumesoperationatthepointwhereinitiallysuspended.

Chargecontroloutput

Anopen-drainoutputusedtocontrolthechargingcurrenttothebattery.CCswitch-ingtohighimpedance(Z)enableschargingcurrenttoflow,andlowtoinhibitchargingcurrent.CCismodulatedtoprovidetop-off,ifenabled,andpulsetrickle.

Functional Description

Figure2showsastatediagramandFigure3showsablockdiagramofthebq2002E/G.

BatteryVoltageandTemperatureMeasurements

Batteryvoltageandtemperaturearemonitoredformaximumallowablevalues.Thevoltagepresentedonthebatterysenseinput,BAT,shouldrepresentasingle-cellpotentialforthebatteryundercharge.Aresistor-dividerratioof

RB1

= N - 1RB2

isrecommendedtomaintainthebatteryvoltagewithinthevalidrange,whereNisthenumberofcells,RB1istheresistorconnectedtothepositivebatteryterminal,andRB2istheresistorconnectedtothenegativebat-teryterminal.SeeFigure1.

Note:Thisresistor-dividernetworkinputimpedancetoend-to-endshouldbeatleast200kΩandlessthan1MΩ.

VCCRTPACK +RB1BATR3TMVCCTSNTCbq2002E/GVSSRB2R4bq2002E/GVSSBAT pin connectionMid-levelsetting for TMThermistor connectionNTC = negative temperature coefficient thermistor.Fg2002E/G01.epsFigure 1.Voltage and Temperature Monitoring and TM Pin Configuration

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bq2002E/G

Chip onVCC 4.0VBattery Voltagetoo High?VBAT < 2VBattery Voltagetoo Low?0.175VCC < VBATVTS > 0.6VCCBattery Temperature?VTS < 0.6VCCChargePendingFastLED =LowVBAT > 2V orVTS < VCC/2 or((PVD or - V or Maximum Time Out)and TM Low)TrickleLED =FlashVBAT > 2VVBAT < 0.175VCCVBAT > 2V(PVD or -V orMaximum Time Out)and TM = LowTop-offLED = ZVBAT > 0.175 VCC,VBAT < 2V, andVTS > VCC/2VBAT 2VTrickleLED = ZSD2002C.epsVBAT2V orVTSVCC/2 orMaximum Time OutFigure 2.State Diagram

OSCClockPhaseGeneratorTimingControlSampleHistoryVoltageReference TMINHCharge-ControlState Machine PVD, - V ALUA to DConverterLBATCheckPower-OnResetCCLEDHTFTCOCheckCheckTSPowerDownVCCMCVCheckBATVSSBd2002CEG.epsFigure 3.Block Diagram

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bq2002E/G

VCC = 0Fast ChargingTop-Off(optional)Pulse-TrickleFast ChargingCC Output73msSee Table 11.17s1.17sCharge initiated by application of power Charge initiated by battery replacement LEDTD2002EG.epsFigure 4.Charge Cycle Phases

Aground-referencednegativetemperaturecoefficientther-mistorplacednearthebatterymaybeusedasalow-costtemperature-to-voltagetransducer.ThetemperaturesensevoltageinputatTSisdevelopedusingaresistor-thermistornetworkbetweenVCCandVSS.SeeFigure1.

1.ApplicationofpowertoVCCor

2.VoltageattheBATpinfallingthroughthemaximumcellvoltageVMCVwhere

VMCV= 2V±5%.

Ifthebatteryiswithintheconfiguredtemperatureandvoltagelimits,theICbeginsfastcharge.Thevalidbat-teryvoltagerangeisVLBATStartingAChargeCycle

Eitheroftwoeventsstartsachargecycle(seeFigure4):

Table 1.Fast-Charge Safety Time/Hold-Off/Top-Off Table

Typical Fast-Charge andTop-OffTime Limits(minutes)

MaximumSynchro-nizedSamplingPeriod(seconds)18.718.79.4

Corre-spondingFast-Charge

Rate

C/21C2CNotes:

TMMidLowHigh

Termination

PVDPVD-∆V

TypicalPVDand -∆VHold-Off Time

bq2002Ebq2002G(seconds)2008040

1608040

30015075

Top-Off

RateDisabledC/16Disabled

Pulse-TrickleRateC/32C/32C/32

Pulse-TrickleWidth(ms)733718

Typical conditions= 25°C,VCC= 5.0VMid = 0.5*VCC±0.5V

Tolerance on all timing is±12%.

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bq2002E/G

VLBAT= 0.175∗VCC±20%

ThevalidtemperaturerangeisVTS>VHTFwhere

VHTF= 0.6∗VCC±5%.

Ifthebatteryvoltageortemperatureisoutsideoftheselimits,theICpulse-tricklechargesuntilthenextnewchargecyclebegins.

IfVMCVFastchargecontinuesuntilterminationbyoneormoreofthefivepossibleterminationconditions:

nnnnn

TheresponseoftheICtopulseslessthan100nsinwidthorbetween3.5msand12msisindeterminate.Tol-eranceonalltimingis±12%.

VoltageTerminationHold-off

Ahold-offperiodoccursatthestartoffastcharging.Duringthehold-offtime,thePVDand-∆Vterminationsaredisabled.Thisavoidsprematureterminationonthevoltagespikessometimesproducedbyolderbatterieswhenfast-chargecurrentisfirstapplied.Maximumvoltageandtemperatureterminationsarenotaffectedbythehold-offperiod.

MaximumVoltage,Temperature,andTime

AnytimethevoltageontheBATpinexceedsthemaxi-mumcellvoltage,VMCV,fastchargeoroptionaltop-offchargeisterminated.

MaximumtemperatureterminationoccursanytimethevoltageontheTSpinfallsbelowthetemperaturecut-offthresholdVTCOwhere

VTCO= 0.5∗VCC±5%.

MaximumchargetimeisconfiguredusingtheTMpin.TimesettingsareavailableforcorrespondingchargeratesofC/2,1C,and2C.Maximumtime-outtermina-tionisenforcedonthefast-chargephase,thenreset,andenforcedagainonthetop-offphase,ifselected.Thereisnotimelimitonthetrickle-chargephase.

Peakvoltagedetection(PVD)Negativedeltavoltage(-∆V)MaximumvoltageMaximumtemperatureMaximumtime

PVDand-∆VTermination

Therearetwomodesforvoltagetermination,dependingonthestateofTM.For-∆V(TM=high),ifVBATislowerthananypreviouslymeasuredvalueby12mV±3mV,fastchargeisterminated.ForPVD(TM=lowormid),ade-creaseof2.5mV±2.5mVterminatesfastcharge.ThePVDand-∆Vtestsarevalidintherange1VSynchronizedVoltageSampling

VoltagesamplingattheBATpinforPVDand-∆Vtermi-nationmaybesynchronizedtoanexternalstimulusus-ingtheINHinput.Low-high-lowinputpulsesbetween100nsand3.5msinwidthmustbeappliedattheINHpinwithafrequencygreaterthanthe“maximumsyn-chronizedsamplingperiod”setbythestateoftheTMpinasshowninTable1.Voltageissampledonthefal-lingedgeofsuchpulses.

Ifthetimebetweenpulsesisgreaterthanthesynchro-nizingperiod,voltagesampling“free-runs”atonceevery17seconds.Asampleistakenbyaveragingtogethervoltagemeasurementstaken57µsapart.TheICtakes32measurementsinPVDmodeand16measurementsin-∆Vmode.Theresultingsampleperiods(9.17and18.18ms,respectively)filteroutharmonicscenteredaround55and109Hz.Thistechniqueminimizestheef-fectofanyAClineripplethatmayfeedthroughthepowersupplyfromeither50or60HzACsources.

IftheINHinputremainshighformorethan12ms,thevoltagesamplehistorykeptbytheICandusedforPVDand-∆Vterminationdecisionsiserasedandanewhis-toryisstarted.Sucharesetisrequiredwhentransition-ingfromfree-runningtosynchronizedvoltagesampling.

Top-offCharge

Anoptionaltop-offchargephasemaybeselectedtofollowfastchargeterminationfor1CandC/2rates.ThisphasemaybenecessaryonNiMHorotherbat-terychemistriesthathaveatendencytoterminatechargebeforereachingfullcapacity.Withtop-offen-abled,chargingcontinuesatareducedrateafterfast-chargeterminationforaperiodoftimeselectedbytheTMpin.(SeeTable1.)Duringtop-off,theCCpinismodulatedatadutycycleof73msactiveforevery1097msinactive.Thismodulationresultsinanaveragerate1/16ththatofthefastchargerate.Maxi-mumvoltage,time,andtemperaturearetheonlyter-minationmethodsenabledduringtop-off.

Pulse-TrickleCharge

Pulse-trickleisusedtocompensateforself-dischargewhilethebatteryisidleinthecharger.Thebatteryispulse-tricklechargedbydrivingtheCCpinactiveonceevery1.17sfortheperiodspecifiedinTable1.Thisre-sultsinatricklerateofC/32.

TMPin

TheTMpinisathree-levelpinusedtoselectthechargetimer,top-off,voltageterminationmode,trickle

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bq2002E/G

rate,andvoltagehold-offperiodoptions.Table1de-scribesthestatesselectedbytheTMpin.Themid-levelselectioninputisdevelopedbyaresistordi-viderbetweenVCCandgroundthatfixesthevoltageonTMatVCC/2±0.5V.SeeFigure4.

Low-PowerMode

TheICentersalow-powerstatewhenVBATisdrivenabovethepower-downthreshold(VPD)where

VPD= VCC- (1V±0.5V)

BoththeCCpinandtheLEDpinaredriventothehigh-Zstate.Theoperatingcurrentisreducedtolessthan1µAinthismode.WhenVBATreturnstoavaluebelowVPD,theICpulse-tricklechargesuntilthenextnewchargecyclebegins.

ChargeStatusIndication

AfastchargeinprogressisuniquelyindicatedwhentheLEDpingoeslow.TheLEDpinisdriventothehigh-Zstateforallconditionsotherthanfastcharge.Figure2outlinesthestateoftheLEDpinduringcharge.

ChargeInhibit

Fastchargeandtop-offmaybeinhibitedbyusingtheINHpin.Whenhigh,INHsuspendsallfastchargeandtop-offactivityandtheinternalchargetimer.INHfreezesthecurrentstateofLEDuntilinhibitisremoved.TemperaturemonitoringisnotaffectedbytheINHpin.Duringchargeinhibit,thebq2002E/Gcontinuestopulse-tricklechargethebatterypertheTMselection.WhenINHreturnslow,chargecontrolandthechargetimerresumefromthepointwhereINHbecameactive.

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bq2002E/G

Absolute Maximum Ratings

SymbolVCCVTTOPRTSTGTSOLDERTBIASNote:

Parameter

VCCrelative toVSS

DC voltage applied on any pinexcludingVCCrelative toVSSOperating ambient temperatureStorage temperatureSoldering temperatureTemperature under bias

Minimum-0.3-0.30-40--40

Maximum+7.0+7.0+70+85+260+85

UnitVV°C°C°C°C

10 sec max.Commercial

Notes

Permanent device damage may occur ifAbsolute Maximum Ratingsare exceeded.Functional opera-tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet.Expo-sure to conditions beyond the operational limits for extended periods of time may affect device reliability.

DC Thresholds

SymbolVTCOVHTFVMCVVLBAT-∆VPVD

(TA= 0 to 70°C;VCC±20%)

Rating0.5*VCC0.6∗VCC

20.175∗VCC

-12-2.5

Tolerance±5%±5%±5%±20%±3±2.5

UnitVVVVmVmV

Notes

VTS≤VTCOinhibits/terminatesfast charge and top-off

VTSVBAT≥VMCVinhibits/terminatesfast charge and top-off

VBATParameter

Temperature cutoffHigh temperature faultMaximum cell voltageMinimum cell voltageBAT input change for-∆VdetectionBAT input change forPVDdetection

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bq2002E/G

Recommended DC Operating Conditions(TA= 0 to 70°C)

SymbolVCCVDETVBATVTSVIHConditionSupply voltage-∆V,PVD detect voltageBattery inputThermistor inputLogic input highLogic input highVIMLogic input midMinimum4.0100.50.5VCC- 0.5VCC2VILLogic input lowLogic input lowVOLVPDLogic output lowPower down---VCC- 1.5- 0.5Typical5.0------VCC2----Maximum6.02VCCVCC--+0.5UnitVVVVVVVVTS< 0.5V prohibitedINHTMTMNotes0.10.50.8VCC- 0.5VVVVINHTMLED,CC,IOL=10mAVBAT≥VPDmax.powersdown bq2002E/G;VBAT< VPDmin.=normal operation.Outputs unloaded,VCC= 5.1VVCC= 5.1V,VBAT= VPD@VOL= VSS+ 0.8VINH,CC,V = VSSto VCCLED,CCICCISBIOLILIOZNote:

Supply currentStandby currentLED,CCsinkInput leakageOutput leakage inhigh-Z stateAll voltages relative to VSS.

--10--5-----5001-±1-µAµAmAµAµA8

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bq2002E/G

Impedance

SymbolRBATRTS

Parameter

Battery input impedanceTS input impedance

Minimum

5050

Typical

--Maximum

--UnitMΩMΩ

Timing

SymboldFCVtDLYNote:

(TA= 0 to +70°C;VCC±10%)

Parameter

Time base variationStart-up delay

Minimum-120.35

Typical

Maximum

120.9

Unit%s

Notes

Starting fromVMCVTypical is at TA= 25°C,VCC= 5.0V.

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bq2002E/G

8-Pin DIP(PN)

8-Pin PN(0.300\" DIP)

Inches

DMillimetersMin.4.060.380.381.400.208.897.625.847.622.292.920.51

Max.4.571.020.561.650.339.658.267.119.402.793.811.02

Dimension

AA1BB1C

ALA1B1Min.0.1600.0150.0150.0550.0080.3500.3000.2300.3000.0900.1150.020

Max.0.1800.0400.0220.0650.0130.3800.3250.2800.3700.1100.1500.040

E1EDEE1eG

CSeGBLS

8-Pin SOIC Narrow (SN)

8-Pin SN(0.150\" SOIC)

Inches

Dimension

AA1BCDEeHL

Min.0.0600.0040.0130.0070.1850.1500.0450.2250.015

Max.0.0700.0100.0200.0100.2000.1600.0550.2450.035

MillimetersMin.1.520.100.330.184.703.811.145.720.38

Max.1.780.250.510.255.084.061.406.220.89

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bq2002E/G

DataSheetRevisionHistory

Change No.

Notes:

Page No.

Added selection guide

Description

Nature of Change

Change 1 = Feb.1999 B changes from Sept.1997

Ordering Information

bq2002E/G

PackageOption:

PN=8-pinplasticDIPSN=8-pinnarrowSOIC

Device:

bq2002EFastChargeICbq2002GFastChargeIC

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IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

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IMPORTANT NOTICE

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.

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BQ2002E资料