PolarHVTM HiPerFETPower MOSFET
Electrically Isolated Tab
N-Channel Enhancement ModeAvalanche RatedFast Intrinsic Diode
IXFR 44N80P
VDSSID25trr
RDS(on)
=800V=25A≤190mΩ≤250ns
SymbolVDSS
VDGRVGSVGSMID25IDMIAREAREASdv/dtPDTJTJMTstgTL
TSOLDVISOLFCWeight
Test Conditions
TJ= 25°C to 150°C
TJ= 25°C to 150°C; RGS = 1 MΩContinuousTransient
TC= 25°C
TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°C
IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,TJ≤ 150°C, RG = 10 ΩTC= 25°C
Maximum Ratings
800800± 30± 402510025803.410300
-55 ... +150
150
-55 ... +150
VVVVAAAmJJV/nsW°C°C°C°C°CV~
ISOPLUS247 (IXFR) E153432
Isolated Tab
G = GateS = Source
D = Drain
Features
z
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1.6 mm (0.062 in.) from case for 10 sPlastic body for 10 seconds50/60 Hz, RMS, 1 minuteMounting force
3002602500
20..120 /4.5..25
5
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N/lbg
Silicon chip on Direct-Copper-Bondsubstrate
- High power dissipation- Isolated mounting surface- 2500V electrical isolation
Low drain to tab capacitance(<30pF)Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structureUnclamped Inductive Switching (UIS)rated
Fast intrinsic Rectifier
Applications
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SymbolTest Conditions
(TJ = 25°C unless otherwise specified)BVDSSVGS(th)IGSSIDSSRDS(on)
VGS= 0 V, ID = 800 μAVDS= VGS, ID = 8 mAVGS= ± 30 V, VDS = 0 VVDS= VDSS VGS= 0 V
VGS= 10 V, ID = IT, Note 1
TJ = 125°C
Characteristic Values Min. Typ.Max.8003.0
5.0± 20050
1.5200
VVnAμAmAmΩ
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DC-DC convertersBattery chargers
Switched-mode and resonant-modepower suppliesDC choppersAC motor control
Advantages
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Easy assemblySpace savingsHigh power density
DS99504E(06/06)
© 2006 IXYS All rights reserved
元器件交易网www.cecb2b.com
IXFR 44N80PSymbolTest Conditions Characteristic Values (TJ = 25°C unless otherwise specified)Min.Typ.Max.VDS= 20 V; ID = IT, Note 1VGS = 0 V, VDS = 25 V, f = 1 MHz2743129103028VGS = 10 V, VDS = 0.5 VDSS, ID = 44 ARG = 1 Ω (External)227527200VGS= 10 V, VDS = 0.5 VDSS, ID = IT6765SnFpFpFnsnsnsnsnCnCnC ISOPLUS247 (IXFR) OutlinegfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCS 0.42°C/W0.15°C/WSource-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified)SymbolTest ConditionsMin.Typ.Max.ISISMVSDtrrQRM IRMVGS = 0 VRepetitiveIF = IS, VGS = 0 V, Note 1IF = 22 A, -di/dt = 100 A/μsVR = 100 V, VGS = 0 V0.88.0441001.5250AAVnsμCANotes:1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;2. Test current IT = 22 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by4,835,592 one or moreof the following U.S. patents:4,850,072
4,881,106
4,931,8445,017,5085,034,796
5,049,9615,063,3075,187,117
5,237,4815,381,0255,486,715
6,162,6656,259,123 B16,306,728 B1
6,404,065 B16,534,3436,583,505
6,683,3446,710,405B26,710,463
6,727,5857,005,734 B26,759,6926,771,478 B2
元器件交易网www.cecb2b.com
IXFR 44N80PFig. 1. Output Characteristics @ 25°C454035VGS = 10V 7V10090806V70VGS = 10V 7VFig. 2. Extended Output Characteristics @ 25°CI D - AmperesI D - Amperes30252015105001234560504030201005V6V5V678036912151821242730VD S - VoltsFig. 3. Output Characteristics @ 125°C4540356VVGS = 10V 7V2.62.4VGS = 10VVD S - VoltsFig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction TemperatureR D S ( o n ) - Normalized2.22.01.81.61.41.21.00.80.6ID = 22AID = 44AI D - Amperes30252015105002468101214165V-50-250255075100125150VD S - VoltsFig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current2.42.2VGS = 10VTJ = 125°C282420TJ - Degrees CentigradeFig. 6. Drain Current vs. CaseTemperatureR D S ( o n ) - Normalized21.81.61.41.210.80102030405060708090100I D - AmperesTJ = 25°C1612840-50-250255075100125150I D - AmperesTC - Degrees Centigrade© 2006 IXYS All rights reserved元器件交易网www.cecb2b.com
IXFR 44N80PFig. 7. Input Admittance706050908070TJ = - 40°C 25°C 125°CFig. 8. Transconductance 4030201003.54 TJ = 125°C 25°C - 40°Cg f s - SiemensI D - Amperes60504030201004.555.566.501020304050607080VG S - VoltsFig. 9. Source Current vs. Source-To-Drain Voltage1401201001098VDS = 400VID = 22AIG = 10mAI D - AmperesFig. 10. Gate ChargeI S - Amperes7VG S - VoltsTJ = 125°CTJ = 25°C0.30.40.50.60.70.80.911.11.21.380604020065432100255075100125150175200VS D - VoltsQ G - NanoCoulombsFig. 11. Capacitance100000f = 1MHzCiss100001.00Fig. 12. Maximum Transient Thermal ResistanceCapacitance - PicoFaradsCoss1000R( t h ) J C - ºC / W3035400.10100Crss1005101520250.010.0010.010.1110VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions.Pulse Width - Seconds
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