专利名称：Method for forming a photonic band-gap
structure and a device fabricated inaccordance with such a method
发明人：Mojtaba Joodaki申请号：US11121990申请日：20050505公开号：US07418164B2公开日：20080826
专利附图：
摘要：A device for application in the high frequency field and a method for forming aphotonic band-gap structure are provided. The device being mountable on a primary
substrate for forming the device. The device being formed by forming conformalcoplanar waveguide metallizations on surface areas of two substrates, connecting theconformal coplanar waveguide metallizations of the two substrates, and structured back-etching of the two substrates, starting at surface areas of the two substrates that areopposite the coplanar waveguide metallizations.
申请人：Mojtaba Joodaki
地址：Munich DE
国籍：DE
代理机构：Muncy, Geissler, Olds & Lowe, PLLC
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