MEMS capping method

专利名称：MEMS capping method发明人：Lushan Jiang,Xiaojun Chen,Xuanjie

Liu,Liangliang Guo,Junde Ma

申请号：US14592873申请日：20150108公开号：US09290378B2公开日：20160322

专利附图：

摘要：A method for fabricating a MEMS device includes providing a substrate having afront surface and a back surface, and forming a protruding engagement member on thefront surface of the substrate. The protruding engagement member has an inner

periphery defining a groove and an outer periphery. The method also includes forming afirst trench having a first depth along the outer periphery, forming a patterned masklayer on the protruding engagement member covering the groove and exposing aportion of the first trench. The method further includes etching the exposed portion ofthe first trench to form a second trench having a second depth, removing the patternedmask layer, bonding the substrate with a MEMS substrate to form the MEMS device, andthinning the back surface to within the second depth. The method prevents dust frombeing deposited on the MEMS substrate as in the case of cutting.

申请人：SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI)CORPORATION

地址：Shanghai CN

国籍：CN

代理机构：Kilpatrick Townsend & Stockton LLP

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