Method for the preparation of an epitaxial silicon

专利名称：Method for the preparation of an epitaxial

silicon wafer with intrinsic gettering

发明人：Charles Chiun-Chieh Yang,Darrell D. Watkins申请号：US10394927申请日：20030319

公开号：US20030159650A1公开日：20030828

专利附图：

摘要：This invention is directed to a novel process for the preparation of a siliconwafer comprising a surface having an epitaxial layer deposited thereon. In one

embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is

also heated to a temperature of at least about 1175° C. This heat treatment beginseither during or after the epitaxial deposition. Following the heat treatment, the heatedwafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) thetemperature of the wafer is greater than about 1000° C., and (b) the wafer is not incontact with a susceptor. In this process, the epitaxial deposition, heating, and cooling areconducted in the same reactor chamber.

申请人：MEMC ELECTRONIC MATERIALS, INC.

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