2SA733-Q-AE3-R资料

UNISONIC TECHNOLOGIES CO., LTD 2SA733 LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 󰂄 DESCRIPTION The UTC 2SA733 is a low frequency amplifier. 31PNP SILICON TRANSISTOR 321SOT-23󰂄 FEATURES * Collector-Emitter voltage: BVCBO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 2SOT-323 󰂄 ORDERING INFORMATION *Pb-free plating product number:2SA733LOrder Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SA733-x-AE3-R 2SA733L-x-AE3-R SOT-23 E CB Tape Reel 2SA733-x-AL3-R 2SA733L-x-AL3-R SOT-323E CB Tape Reel 2SA733L-x-AE3-R(1)Packing Type(2)Package Type(3)Rank(4)Lead Plating(1) R: Tape Reel(2) AE3: SOT-23, AL3: SOT-323(3) x: refer to Classification of hFE(4) L: Lead Free Plating, Blank: Pb/Sn 󰂄 MARKING A7 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-068,B 元器件交易网www.cecb2b.com

2SA733 PNP SILICON TRANSISTOR 󰂄 ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLRATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Dissipation(Ta=25󰄊) mW PC 250 Collector Current IC -150 mA ℃ Junction Temperature TJ 125 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLCollector-Base Breakdown Voltage BVCBO Collector-Emitter Breakdown Voltage BVCEO Collector-Emitter Saturation Voltage VCE(SAT)Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(note) hFE Current Gain Bandwidth Product fT Output Capacitance Cob Noise Figure NF TEST CONDITIONS MIN TYP MAXUNITIC=-100µA, IE=0 -60 V IC=-10mA, IB=0 -50 V IC=-100mA, IB=-10mA -0.1 -0.3V VCB=-40V, IE=0 -100nAVEB=-3V, IC=0 -100nAVCE=-6V, IC=-1mA 90 600 VCE=-10V, IC=-50mA 100 190 MHzVCB=-10V, IE=0, f=1MHz 2.0 3.0pFIC=-0.1mA, VCE=-6V 4.0 6.0dBRG=10kΩ, f=100Hz 󰂄 CLASSIFICATION OF hFE RANK R Q P K RANGE 90-180 135-270 200-400 300-600 www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 2 of 4 QW-R206-068,B 元器件交易网www.cecb2b.com

2SA733 󰂄 TYPICAL CHARACTERISTICS Fig.1 Static Characteristics-100-80IB=-300µA-60-40IB=-250µAIB=-200µAIB=-150µA-200IB=-100µAIB=-50µA0-4-8-12-16-20Collector-Emitter Voltage ( V)100-10-1103PNP SILICON TRANSISTOR Fig.2 DC Current GainCollector Current, IC(mA)VCE=-6VDC Current Gain, hFE102101-100-101-102Collector Current, IC (mA)-103 Fig.3 Base-Emitter on Voltage-102Fig.4 Saturation Voltage-104IC=10*IBCollector Current, IC(mA)-101VCE=-6VSaturation Voltage (MV)-103VBE(SAT)VCE(SAT)-102-100-10-10-0.2-0.4-0.6-0.8-1.0-10-10-11-100-101-102-103Base-Emitter Voltage (V)Collector Current, IC(mA)Fig.6 Collector Output Capacitance102 Fig.5 Current Gain-Bandwidth ProductCurrent Gain-Bandwidth Product, fT(MHz)103102VCE=-6VCapacitance, Cob (pF)-102101101100100-1-10-100-101Collector Current, IC(mA)10-1-100-101-102-103Collector-Base Voltage (V) www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 3 of 4 QW-R206-068,B 元器件交易网www.cecb2b.com

2SA733 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. www.unisonic.com.tw UNISONIC TECHNOLOGIES CO., LTD 4 of 4 QW-R206-068,B