AOD4142

ZhenYangGroup CO,LTD AOD4142Features N-Channel Enhancement Mode MOSFETGeneral DescriptionAOD4142 uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.VDS (V) = 25VID = 50 A (VGS = 20V)RDS(ON) < 9 mΩ (VGS = 10V)RDS(ON) < 15 mΩ (VGS = 4.5V) z Pin Configuration 技达安Absolute Maximum Ratings TA=25°C unless otherwise notedParameterDrain-Source VoltageGate-Source VoltageOperating and Storage Junction Temperature Range 有GS科限公D SymbolVDSVGSTJ, TSTG司Maximum25-55 to +150 UnitsV°C ±20 V众Pulsed Drain Current (Note 2) IDMIDPDIDMIDPDIDMIDPD100 A 14 1.5 100 A W A 圳市Mounted on PCB of minimum Footprint Continuous Drain Current (Note 1) Total Power Dissipation (Note 1) Pulsed Drain Current (Note 2) Continuous Drain Current (25°C) Total Power Dissipation (25°C) Pulsed Drain Current (Note 2) Continuous Drain Current (25°C) Total Power Dissipation (25°C) Mounted on PCB of 1in2 Pad Area 18 A 2.5 100 50 (Note 3) 50 W A A W Mounted on Large Heat Sink 深 1 / 5

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Electrical Characteristics (TJ=25°C unless otherwise noted) AOD4142 Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage Gate Threshold Voltage Gate–Body Leakage Current Zero Gate Voltage Drain Current Drain–Source On–State Resistance Forward Transconductance Diode Forward Voltage Input Capacitance Output Capacitance

Reverse Transfer Capacitance Turn–On Delay Time Turn–Off Delay Tim z

V(BR)DSSVGS(TH)IGSSIDSSRDS(ON)GFSVSDCISSCOSSCRSSTD(ON)

VGS = 0 V, ID = 250uA VDS = VGS, ID =250uA VGS = ± 20 V, VDS = 0 V VDS = 24 V, VGS = 0 V VGS = 10 V, ID = 30A VGS = 4.5 V, ID = 15A VDS = 5 V, ID = 5 A

25

27

--

V

1.5 2.0 2.5 V -- -- --

-- --

±100 1 9

nA uA mΩ S V

公-- -- --

司7.5 11 7.3 0.84

15 -- 1

VGS = 0 V, IS = 10 A

有VDS = 15 V, VGS = 0 V, f = 1.0 MHz

技安科VDS = 15 V, RL = 15Ω, IDS=1A, VGS=10V, RGEN=6Ω

TD(OFF)

Package Information

深圳市众达限-- 1560 -- -- 345 -- pF -- 245 -- -- 17 -- nS

-- 41 -- 2 / 5

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AOD4142 z N-channel Typical Performance Characteristics

100

5V4.5V4V

2080

RDS(ON), On-Resistance (mΩ)18161412VGS=4.5VID, Drain Current (A)3.5V60

86420102000.00.51.01.52.02.5Fig1. Drain Current vs. Drain-Source Voltage

VDS, Gate-Source Voltage (V)

18

技有2.32.22.12.01.91.81.71.61.5-2502550

Fig2.On-Resistance vs. Drain Current

限0.42030405060公 752.5V司708040

3V10VGS=10V90100ID, Drain Current (A)

RDS(ON), On-Resistance (mΩ)1412108640

1

2

安科16

ID=30ANormalized Threshold Voltage (V)ID=250uA市众达 345678910

100o

125150Fig3.On-Resistance vs. Gate-Source Voltage

VGS, Gate-Source Voltage (V)

TJ, Junction Temperature ( C)

Fig4.Threshold Voltage vs. Junction Temperature

16141210

深圳

VGS=4.5V,ID=15ARDS(ON), On-Resistance (mΩ)IS, Source Current (A)10

8

VGS=10V,ID=30A64-25

1

0255075100

o

125150

0.10.0TJ=25C0.81.2oFig5.On-Resistance vs. Junction Temperature

TJ, Junction Temperature ( C)

Fig6.Body Diode Forward Voltage vs.Diode Current

VSD, Source-Drain Voltage (V)

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AOD4142

20001600

C, Capacitance (PF)12008004000

CISS COSS0510152025

深圳市众达安科技 4 / 5

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限Fig7.Drain-Source Voltage vs.Capacitance

VDS, Drain-Source Voltage (V)

公CRSS司ZhenYangGroup CO,LTD

AOD4142 DISCLAIMER

HENYANG GROUP CO,LTD RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. Z HENYANG DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR RIGHTS, NOR THE RIGHTS OF OTHERS.

深圳市众达安科技 5 / 5

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限公CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

司