2SC4834

Silicon NPN Power Transistors 2SC4834

DESCRIPTION

·With ITO-220 package

·Switching power transistor ·High voltage,high speed

PINNING

PIN DESCRIPTION 123

Base Collector Emitter

Fig.1 simplified outline (ITO-220) and symbol

Absolute maximum ratings(Ta=25)

SYMBOL PARAMETER VCBO VCEO VEBO ICICM IB

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current

CONDITIONS VALUE UNIT

500 400 7 8 16 3 6 45 150 -55~150 V V V A A A A W

Open emitter Open base Open collector TC=25

IBM Base current-Peak PTTj

Total power dissipation Junction temperature

Tstg Storage temperature

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT Rth j-C

Thermal resistance junction to case

2.78

/W

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4834

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL PARAMETER VCEO(SUS)

Collector-emitter sustaining voltage

CONDITIONS MIN TYP. MAX UNIT

IC=0.1A ;IB0 400 V

VCEsat Collector-emitter saturation voltage IC=4A; IB0.8A 1.0 V VBEsat Base-emitter saturation voltage ICBO ICEO IEBO hFE-1 hFE-2 fT

Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency

IC=4A; IB0.8A 1.5 V

=

0.1

mA

=At rated volatge =At rated volatge 0.1 mA

IC=4A ; VCE2V 10 25

=IC=1mA ; VCE2V 10 ==IC=0.8A ; VCE10V 13 MHz

IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5CVBB2=4V

0.3 µs

1.3

µs

ton Turn-on time tstf

Storage time Fall time

0.1 µs 2

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors PACKAGE OUTLINE

2SC4834

Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

3