2SC1740S(ROHM)

Transistors

General Purpose Transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC4617H /2SC1740S

!Features1) Low Cob.

Cob=2.0pF (Typ.)

2) Complements the 2SA1037AK /2SA1576A / 2SA1774 /2SA1774H / 2SA933AS.

!External dimensions (Units : mm)

2SC2412K2.9±0.21.9±0.20.950.95(1)(2)1.1+0.2−0.10.8±0.12SC40812.0±0.21.3±0.10.650.65(1)(2)0.20.9±0.10.7±0.12SC46171.6±0.21.0±0.1+0.10.2−0.05(1)0.50.5+0.10.2−0.050.7±0.10.55±0.10.21.6+−0.11.25±0.12.8±0.22.1±0.10.8±0.10~0.10~0.11.6±0.2(2)0~0.1+0.10.15−0.060.3~0.6(3)All terminals have same dimensions0.4+0.1−0.05(3)0.1~0.40.15±0.05+0.10.3−0.050.15±0.05!Structure

Epitaxial planar typeNPN silicon transistor

ROHM : SMT3EIAJ : SC-59(1) Emitter(2) Base(3) CollectorROHM : UMT3EIAJ : SC-70(1) Emitter(2) Base(3) CollectorROHM : EMT3(1) Emitter(2) Base(3) CollectorAbbreviated symbol: B*Abbreviated symbol: B*Abbreviated symbol: B*2SC4617H1.61.00.50.50.72SC1740S4±0.22±0.23±0.2(1)(2)(15Mn.)0.85(3)0.270.1252.5+0.4−0.10.5+0.150.45−0.051.60~0.10.45+0.15−0.05ROHM : EMT3 Flat leadEIAJ : SC-89(1) Emitter(2) Base(3) Collector(1)(2)(3)3Mn.ROHM : SPTEIAJ : SC-72(1) Emitter(2) Collector(3) BaseAbbreviated symbol: B** Denotes hFE!Absolute maximum (Ta=25°C)

ParameterCollector-base voltageCollector-emitter voltageEmitter-base voltageCollector current2SC2412K, 2SC4081Collector power 2SC4617,2SC4617Hdissipation2SC1740SJunction temperatureStorage temperatureSymbolVCBOVCEOVEBOICLimits605070.150.2PC0.150.3TjTstg150-55~+150˚C˚CmWUnitVVVA0.1Mn.All terminals have same dimensions0.3+0.1−0(3)2SC2412K / 2SC4081 / 2SC4617 / 2SC4617H / 2SC1740S

Transistors

!Electrical characteristics (Ta=25°C)

ParameterCollector-base breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltageCollector cutoff currentEmitter cutoff currentDC current transfer ratioCollector-emitter saturation voltageTransition frequencyOutput capacitanceSymbolBVCBOBVCEOBVEBOICBOIEBOhFEVCE(sat)fTCobMin.60507--120---Typ.-------1802Max.---0.10.15600.4-3.5UnitVVVµAµA-VMHzpFIC=50µAIC=1mAIE=50µAVCB=60VVEB=7VVCE=6V, IC=1mAIC/IB=50mA/5mAVCE=12V, IE=-2mA, f=100MHzVCE=12V, IE=0A, f=1MHzConditions!Packaging specifications and hFE

Package CodeType2SC2412K2SC40812SC46172SC4617H2SC1740ShFEQRSQRSQRSQRSQRS----------Basic ordering unit (pieces)T1463000T1063000-TapingTL3000--T2L8000---BulkTP5000----hFE values are classified as follows :

ItemhFEQ120~270R180~390S270~560!Electrical characterristic curves

50100VCE=6VCOLLECTOR CURRENT : IC (mA)Ta=25˚CCOLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC (mA)20105Ta=100˚C25˚C-55˚C800.50mAmA0.45A0.40m0.35mA0.30mA0.25mA0.20mA10Ta=25˚C30µA27µA24µA21µA860618µA15µA210.50.20.10400.15mA0.10mA412µA9µA2000.05mAIB=0A00.40.81.21.62.026µA3µA0.20.40.60.81.01.21.41.6BASE TO EMITTER VOLTAGE : VBE (V)0048IB=0A121620COLLECTOR TO EMITTER VOLTAGE : VCE (V)COLLECTOR TO EMITTER VOLTAGE : VCE (V)Fig.1 Grounded emitter propagation characteristics

Fig.2 Grounded emitter outputcharacteristics ( I )

Fig.3 Grounded emitter outputcharacteristics ( II )2SC2412K / 2SC4081 / 2SC4617 / 2SC4617H / 2SC1740S

Transistors

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)500Ta=25˚C DC CURRENT GAIN : hFEVCE=5V3V1V500Ta=100˚C2001005025˚C−55˚CVCE=5V 0.5Ta=25˚CDC CURRENT GAIN : hFE200100500.2IC/IB=5020100.10.050.0220100.220100.20.51251020501002000.51251020501002000.010.20.5125102050100200COLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC (mA)Fig.4 DC current gain vs.collector current ( I )Fig.5 DC current gain vs. collector current ( II )Fig. 6 Collector-emitter saturationvoltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)0.5COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)TRANSITION FREQUENCY : fT (MHz)IC/IB=100.5IC/IB=50500Ta=25˚CVCE=6V0.2Ta=100˚C25˚C-55˚C0.20.10.05Ta=100˚C25˚C -55˚C0.10.052000.020.020.010.20.51251020501001000.010.20.512510205010020050-0.5-1-2-5-10-20-50-100COLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC (mA)EMITTER CURRENT : IE (mA)Fig.8 Collector-emitter saturation Fig.7 Collector-emitter saturationvoltage vs. collector current (II)voltage vs. collector current ( I )

Fig.9 Gain bandwidth product vs.emitter currentCOLLECTOR OUTPUT CAPACITANCE : Cob (pF)EMITTER INPUT CAPACITANCE : Cib (pF)2010CibTa=25˚Cf=1MHzIE=0AIC=0A

BASE COLLECTOR TIME CONSTANT : Cc·rbb (ps)200Ta=25˚Cf=32MHZVCB=6V1005502Co20b10.20.512510205010-0.2-0.5-1-2-5-10COLLECTOR TO BASE VOLTAGE : VCB (V)EMITTER TO BASE VOLTAGE : VEB (V)EMITTER CURRENT : IE (mA)Fig.10 Collector output capacitance vs. collector-base voltageEmitter input capacitance vs.emitter-base voltageFig.11 Base-collector time constantvs. emitter current