Advanced IGBT/MOSFET Driver
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0.75A source/1.2A sink min gate driveActive Miller clamp feature
Two steps turn-off with adjustable level and delay
Desaturation detectionFault status output
Negative gate drive ability
Input compatible with pulse transformer or optocoupler
Separate sink and source outputs for easy gate drive
UVLO protection2kV ESD protection
Applications
sss
1200V 3-Phase InverterMotor ControlUPS Systems
DSO-14(Plastic MicroPackage)Description
TD350 is an advanced gate driver for IGBT andpower MOSFET. Control and protection functionsare included and allow the design of high reliabilitysystems.
Innovative active Miller clamp function avoids theneed of negative gate drive in most applicationsand allows the use of a simple bootstrap supplyfor the high side driver
TD350 includes a two-level turn-off feature withadjustable level and delay. This function protectsagainst excessive overvoltage at turn-off in caseof overcurrent or short-circuit condition. Samedelay is applied at turn-on to prevent pulse widthdistortion.
TD350 also includes an IGBT desaturationprotection and a FAULT status output.
TD350 is compatible with both pulse transformerand optocoupler signals.
Pin Connections (top view)
INVREFFAULTNCCOFFNCLVOFF1234567141312DESATVHOUTHOUTLVLCLAMPGNDTD350111098Order Codes
Part NumberTD350IDTD350IDT
Temperature Range
-40, +125°C
PackageSO
PackagingTube Tape & Reel
August 2004Revision 11/11
TD350
1 Block Diagram
Figure 1: Schematic block diagram
VrefBlock Diagram
INPulse TransformerVHVrefUVLODesatVrefBlockDESAT16VVHOptionnalVREFFAULTNCCOFFNCLVOFFOUTHOUTLVLCLAMPGND-10VVrefVHOff LevelTD350Table1:Pin description
Name
INVREFFAULTNCCOFFNCLVOFFGNDCLAMPVLOUTLOUTHVHDESAT
Pin Number
1234567891011121314
ControlOffdelayType
Analog inputAnalog outputDigital outputNot connectedTiming capacitorNot connectedAnalog inputPower supplyAnalog outputPower supplyAnalog outputAnalog outputPower supplyAnalog input
Function
Input
+5V reference voltageFault status outputTurn off delay
Turn off levelSignal groundMiller clampNegative supply
Gate drive output (sink)Gate drive output (source)Positive supply
Desaturation protection
2/11Absolute Maximum Ratings2 Absolute Maximum Ratings
Table2:Key parameters and their absolute maximum ratingsSymbol
VHLVHVLVoutVdesVterPdTstgTjRhjaRhjcESD
TD350
Parameter
Maximum Supply Voltage (VH - VL)Maximum VH voltage vs. GNDMinimum VL voltage vs. GND
Voltage on OUTH, OUTL, CLAMP pinsVoltage on DESAT, FAULT, LVOFF pinVoltage on other pins (IN, COFF, VREF)Power dissipationStorage temperature
Maximum Junction Temperature
Thermal Resistance Junction-AmbientThermal Resistance Junction-CaseElectrostatic discharge
Value
2828-12
VL-0.3 to VH+0.3-0.3 to VH+0.3-0.3 to 7500-55 to 150150125222
Unit
VVVVVVmW°C°C°C/W°C/WkV
Table3:Operating conditionsSymbol
VHVLVH-VLToper
Parameter
Positive Supply Voltage vs. GNDNegative Supply Voltage vs. GNDMaximum Total Supply Voltage
Operating Free Air Temperature Range
Value
UVLO to 260 to -1026-40 to 125
Unit
VVV°C
3/11TD350
3 Electrical Characteristics
Electrical Characteristics
Table4:Tamb = -20 to 125°C, VH=16V, VL=-10V (unless otherwise specified)Symbol
Input
VtonVtofftonminIinp
Parameter
IN turn-on threshold voltageIN turn-off threshold voltageMinimum pulse widthIN Input current
Test ConditionMin
0.8100
Typ
1.04.0135
MaxUnit
VVnsµAVVmAVµAnsVVVVVΩ
4.222015.155.22
Voltage reference - note 1
Vref
Voltage reference
T=25°C
Tmin 5.00 IrefMaximum output currentDesaturation protection VdesDesaturation thresholdIdesSource currentFault output tfaultDelay for fault detectionVFLFAULT low voltageClampVtclampCLAMP pin voltage threshold VCLOff DelayVtdelRdelOff LevelsIblvoffViolvOutputs VOL1 VOL2 Clamp low voltage at Icsink=500mAVoltage thresholdDischarge resistor LVOFF peak input current (sink)Offset voltage Output low voltage at Iosink=20mAOutput low voltage at Iosink=200mA 7.2250 7.9 Ifsink=10mA 2.0 T=25°C Tmin I=1mALVOFF=12VLVOFF=12V 120-0.152.50 5001 VL+2.5VL+3.02.655002000VL+0.35VL+1.0VL+1.5VL+2.5VL+3.0 VH-2.5VH-3.0VH-4.0 1301757590 270101090.5 6011101 8001101211 -0.3 µAVVVVVVVVVnsnsnsnsnsnsVVVmA T=25°C Tmin Tmin CL=1nF, 10% to 90% trRise time VL=0 VL=-10V CL=1nF, 90% to 10% Fall time VL=0tf (2 step turn-off disabled) VL=-10V Input to output propagation delay at10% output change tpd turn-on (2 step delay disabled) ∆twInput to output pulse distortion10% output changeUnder Voltage Lockout (UVLO)UVLOHUVLO top thresholdUVLOLUVLO bottom thresholdVhystUVLO hysteresisUVH-UVLSupply current IinQuiescent currentoutput=0V, no load 1)Recommended capacitor range on VREF pin is 10nF to 100nF.5 4/11Functional Description4 Functional Description4.1 Input The input is compatible with optocouplers or pulsetransformers. The input is triggered by the signaledge and allows the use of low-sized, low-costpulse transformer. Input is active low (output ishigh when input is low) to ease the use ofoptocoupler. When driven by a pulse transformer,the input pulse (positive and negative) width mustbe larger than the minimum pule width tonmin. TD350 4.5 Two level turn-off The two-level turn-off is used to increase thereliability of the application. During turn-off, gate voltage can be reduced to aprogrammable level in order to reduce the IGBTcurrent (in the event of over-current). This actionavoids both dangerous overvoltage across theIGBT, and RBSOA problems, especially at shortcircuit turn-off. Turn-off (Ta) delay is programmable through anexternal resistor and capacitor for accurate timing.Turn-off delay (Ta) is also used to delay the inputsignal to prevent distortion of input pulse width. 4.2 Voltage reference A voltage reference is used to create accuratetiming for the two-level turn-off with externalresistor and capacitor. 4.3 Desaturation protection Desaturation protection ensures the protection ofthe IGBT in the event of overcurrent. When theDESAT voltage goes higher that 7V, the output isdriven low (with 2-level turn-off if applicable). TheFAULT output is activated. The FAULT state isexited at the next falling edge of IN input.A programmable blanking time is used to allowenough time for IGBT saturation. Blanking time isprovided by an internal current source andexternal capacitor. DESAT input can also be used with an externalcomparator for overcurrent or over temperaturedetection. 4.6 Minimum ON time In order to ensure the proper operation of the 2-level turn-off function, the input ON time (Twin)must be greater than the Twinmin value: Twinmin=Ta+2*Rdel*Coff Rdel is the internal discharge resistor and Coff isthe external timing capacitor. Input signals smaller than Ta are ignored. Inputsignals larger than Twinmin are transmitted to theoutput stage after the Ta delay with minimumwidth distortion (∆Tw=Twout-Twin). For an input signal width Twin between Ta andTwinmin, the output width Twout is reduced belowTwin (pulse distortion) and the IGBT could bepartially turned on. These input signals should beavoided during normal operation. 4.4 Active Miller clamp A Miller clamp allows the control of the Millercurrent during a high dV/dt situation and can avoidthe use of a negative supply voltage. During turn-off, the gate voltage is monitored andthe clamp output is activated when gate voltagegoes below 2V (relative to GND). The clampvoltage is VL+3V max for a Miller current up to500mA. The clamp is disabled when the IN inputis triggered again. 4.7 Output The output stage is able to sink 2.3A and source1.5A typical at 25°C (1.2A/0.75A minimum overthe full temperature range). Separated sink andsource outputs allow independent gate chargeand discharge control without an extra externaldiode. 5/11TD350 4.8 Fault status output Fault output is used to signal a fault event(desaturation, UVLO) to a controller. The fault pinis designed to drive an optocoupler. Functional Description for VH<2V). Fault output signals the undervoltagestate and is reset only when undervoltage statedisappears. UVHVHUVLVccmin4.9 Undervoltage protection Undervoltage detection protects the application inthe event of a low VH supply voltage (during start-up or a fault situation). During undervoltage, theOUTH pin is open and the OUTL pin is driven low(active pull-down for VH>2V, passive pull-downFigure 2: Detailed Internal Schematic 2VOUTFAULTUVLOINComp_InputDelayVref1V-4VVHVREF250uAComp_DesatDESAT7.2VControl BlockVrefFAULTComp_DelayOffCOFF2.5VComp_ClampS22VCLAMPVHOUTHVHOUTLLVOFF2-level OFF driverVLGNDrev. 36/11Timing Diagrams5 Timing Diagrams Figure 3: Turn-on and turn-off INTwinTD350 COFFTaVH levelTaLVOFFOUTTwoutOpenVL levelCLAMPVH levelMiller plateauVgeVL levelClamp thresholdVceFigure 4: Minimum ON time Tin IN2.5VCOFFTaTaTaVH levelLVOFFOUTVL level7VDESATDesat Blanking TimeFAULTopen7/11TD350 6 Typical Performance Curves Figure 6: Supply current vs temperature 5.04.0In (mA)Vref (V)Typical Performance Curves Figure 9: Voltage reference vs temperature 5.205.103.02.01.00.0-50-250255075100125Temp (°C)5.004.904.80-50-250255075100125Temp (°C)Figure 7: Low level output voltage vs temp. 3.0Figure 10: High level output voltage vs temp. 4.03.0VH-VOH (V)VOL-VL (V)2.0Iosource=500mA2.0Iosink=500mA1.0Iosource=200mAIosink=200mAIosink=20mA-50-2502550751001251.0Iosource=20mA0.0Temp (°C)0.0-50-250255075100125Temp (°C)Figure 8: Desaturation threshold vs temperature 109Figure 11: Desaturation source current vs temp. 500400Ides (uA)3002001000Vdes (V)8765-50-2502550Temp (°C)75100125-50-250255075100125Temp (°C)8/11Application Diagrams7 Application Diagrams Figure 12: Single supply IGBT drive with active Miller clamp and 2-level turn-off VHIN5.1VTD350 UVLODesatVrefBlockDESAT16VVHOUTHOUTLVLCLAMPGNDVrefVREFFAULTNCVrefNCVHLVOFFOff LevelTD350Figure 13: Large IGBT drive with negative gate drive and desaturation detection VrefINPulse TransformerControlCOFFOffdelayUVLODesatVrefBlockDESAT16VVHOUTHOUTLVLCLAMPGND-10VVHVrefVREFFAULTNCVrefNCVHLVOFFOff LevelTD350Figure 14: Use of DESAT input for direct overcurrent detection VrefVrefINPulse TransformerUVLODesatVrefBlockControlCOFFOffdelayDESAT16VVHOUTHOUTLVLCLAMPGNDVHVrefVREFFAULTNCVrefNCVHLVOFFOff LevelTD350ControlCOFFOffdelay9/11TD350 8 PACKAGE MECHANICAL DATA SO-14 MECHANICAL DATADIM.Aa1a2bb1Cc1DEee3FGLMS3.84.60.58.555.81.277.624.05.31.270.688˚(max.)0.1490.1810.0198.756.20.350.190.545˚ (typ.)0.3360.2280.1mm.MIN.TYPMAX.1.750.21.650.460.250.0130.0070.003MIN.PACKAGE MECHANICAL DATA inchTYP.MAX.0.0680.0070.0640.0180.0100.0190.3440.2440.0500.3000.1570.2080.0500.026 PO13G10/11Revision History9 Revision History Date01 August 2004 Revision 1 First Release Description of Changes TD350 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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