专利名称：Forming silicon-carbon embedded
source/drain junctions with highsubstitutional carbon level
发明人：Emre Alptekin,Abhishek Dube,Henry K.
Utomo,Reinaldo A. Vega,Bei Liu
申请号：US13646754申请日：20121008公开号：US08927375B2公开日：20150106
专利附图：
摘要：Embodiment of the present invention provides a method of forming a
semiconductor device. The method includes providing a semiconductor substrate;epitaxially growing a silicon-carbon layer on top of the semiconductor substrate;
amorphizing the silicon-carbon layer; covering the amorphized silicon-carbon layer with astress liner; and subjecting the amorphized silicon-carbon layer to a solid phase epitaxy(SPE) process to form a highly substitutional silicon-carbon film. In one embodiment, thehighly substitutional silicon-carbon film is formed to be embedded stressors in thesource/drain regions of an nFET transistor, and provides tensile stress to a channel regionof the nFET transistor for performance enhancement.
申请人：International Business Machines Corporation,STMicroelectronics, Inc.
地址：Armonk NY US,Coppell TX US
国籍：US,US
代理人：Yuanmin Cai,Joseph Petrokaitis
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