您的当前位置:首页正文

BF423ZL1G;BF421ZL1;BF421ZL1G;BF423G;BF423ZL1;中文规格书,Datasheet资料

2022-05-26 来源:易榕旅网
BF421, BF423

High Voltage Transistors

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Collector−Emitter VoltageCollector−Base VoltageEmitter−Base VoltageCollector Current − ContinuousCollector Current − PeakTotal Device Dissipation (Note 1)@ TA = 25°C

Derate above 25°C

Operating and Storage JunctionTemperature Range

SymbolVCEOVCBOVEBOICICMPD

BF421−300−300

BF423−250−250

UnitVdcVdcVdcmAdcmAmWmW/°C°C

3BASESymbolRqJARqJL

Max15068

Unit°C/W°C/W

12http://onsemi.com

−5.0−5001008306.6−55 to +150

1TO−92CASE 29STYLE 14

23STRAIGHT LEADBULK PACK

3BENT LEADTAPE & REELAMMO PACK

COLLECTOR

2MARKINGDIAGRAM

BF42xAYWWG

GTJ, Tstg

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,Junction−to−AmbientThermal Resistance,Junction−to−Lead

1EMITTER

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.

1.Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of5 mm.

BF42x=Device Code

x = 1 or 3

A=Assembly LocationY=YearWW=Work WeekG=Pb−Free Package(Note: Microdot may be in either location)

ORDERING INFORMATION

DeviceBF421ZL1GBF423GBF423ZL1G

PackageTO−92

(Pb−Free)TO−92(Pb−Free)TO−92(Pb−Free)

Shipping2000/Ammo Pack5000 Units/Box2000/Ammo Pack

*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010

July, 2010 − Rev. 5

1

Publication Order Number:

BF421/D

http://oneic.com/

BF421, BF423

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)(IC = −1.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage(IC = −100 mAdc, IE = 0)Emitter−Base Breakdown Voltage(IE = −100 mAdc, IC = 0)Collector Cutoff Current(VCB = −200 Vdc, IE = 0)Emitter Cutoff Current(VEB = −5.0 Vdc, IC = 0)ON CHARACTERISTICSDC Current Gain

(IC = −25 mA, VCE = −20 Vdc)Collector−Emitter Saturation Voltage(IC = −20 mAdc, IB = −2.0 mAdc)Base−Emitter Saturation Voltage(IC = −20 mA, IB = −2.0 mA)SMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −10 Vdc, f = 20 MHz)Common Emitter Feedback Capacitance(VCB = −30 Vdc, IE = 0, f = 1.0 MHz)

1.Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

fTCre

60−

−2.8

MHzpF

BF421BF423

hFE

5050−−

−−−0.5−2.0

VdcVdc

BF421BF423BF421BF423BF421BF423BF421BF423BF421BF423

V(BR)CEO

Vdc

−300−250−300−250−5.0−5.0−−−−

−−

Vdc

−−

Vdc

−−−0.01−−100−

mAdc

Symbol

Min

Max

Unit

V(BR)CBO

V(BR)EBO

ICBO

IEBO

nAdc

VCE(sat)VBE(sat)

300250hFE, DC CURRENT GAIN200

25°C150100500

-55°CTJ = +125°CVCE = 10 Vdc0.11.0IC, COLLECTOR CURRENT (mA)

10100

Figure 1. DC Current Gain

http://onsemi.com

2

http://oneic.com/

BF421, BF423

100

Cib @ 1MHzf T, CURRENT-GAIN — BANDWIDTH (MHz)15013011090705030101

3

5

11131579

IC, COLLECTOR CURRENT (mA)

TJ = 25°CVCE = 20 VdcF = 20 MHz171921C, CAPACITANCE (pF)10Ccb @ 1MHz1.00.10.11.010100VR, REVERSE VOLTAGE (VOLTS)

1000Figure 2. Capacitance

1.41.2V, VOLTAGE (VOLTS)1.00.80.60.40.20.00.1

1.010IC, COLLECTOR CURRENT (mA)

100

Figure 3. Current−Gain − Bandwidth

VCE(sat) @ 25°C, IC/IB = 10VCE(sat) @ 125°C, IC/IB = 10VCE(sat) @ -55°C, IC/IB = 10VBE(sat) @ 25°C, IC/IB = 10VBE(sat) @ 125°C, IC/IB = 10VBE(sat) @ -55°C, IC/IB = 10VBE(on) @ 25°C, VCE = 10 VVBE(on) @ 125°C, VCE = 10 VVBE(on) @ -55°C, VCE = 10 VFigure 4. ”ON” Voltages

1IC, COLLECTOR CURRENT (A)0.11.0 s10 ms0.010.0011101001000VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 5. Safe Operating Area

http://onsemi.com

3

http://oneic.com/

BF421, BF423

PACKAGE DIMENSIONS

TO−92 (TO−226)CASE 029−11ISSUE AM

ARPLSEATINGPLANE

BSTRAIGHT LEADBULK PACK

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.

4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.

DIMABCDGHJKLNPRV

INCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0210.0450.0550.0950.1050.0150.0200.500---0.250---0.0800.105---0.100

0.115---0.135---MILLIMETERS

MINMAX4.455.204.325.333.184.190.4070.5331.151.392.422.660.390.5012.70---6.35---2.042.66---2.54

2.93---3.43---

KXXHV1DGJCNNSECTION X−X

STYLE 14:

PIN 1.EMITTER

2.COLLECTOR3.BASE

RABBENT LEADTAPE & REELAMMO PACK

PTSEATINGPLANENOTES:

1.DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.

2.CONTROLLING DIMENSION: MILLIMETERS.3.CONTOUR OF PACKAGE BEYONDDIMENSION R IS UNCONTROLLED.

4.LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K MINIMUM.

DIMABCDGJKNPRV

MILLIMETERSMINMAX4.455.204.325.333.184.190.400.542.402.800.390.5012.70---2.042.661.504.002.93---3.43---

KGXXV1DJCNSECTION X−X

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: orderlit@onsemi.comN. American Technical Support: 800−282−9855 Toll FreeUSA/CanadaEurope, Middle East and Africa Technical Support:Phone: 421 33 790 2910Japan Customer Focus CenterPhone: 81−3−5773−3850ON Semiconductor Website: www.onsemi.comOrder Literature: http://www.onsemi.com/orderlitFor additional information, please contact your localSales Representativehttp://onsemi.com4BF421/Dhttp://oneic.com/

分销商库存信息:

ONSEMIBF423ZL1GBF423G

BF421ZL1BF423ZL1

BF421ZL1GBF423

因篇幅问题不能全部显示,请点此查看更多更全内容