LM5105100VHalfBridgeGateDriverwithProgrammableDead-timeFebruary2005
LM5105
100VHalfBridgeGateDriverwithProgrammableDead-time
GeneralDescription
TheLM5105isahighvoltagegatedriverdesignedtodriveboththehighsideandlowsideN–ChannelMOSFETsinasynchronousbuckorhalfbridgeconfiguration.Thefloatinghigh-sidedriveriscapableofworkingwithrailvoltagesupto100V.ThesinglecontrolinputiscompatiblewithTTLsignallevelsandasingleexternalresistorprogramstheswitchingtransitiondead-timethroughtightlymatchedturn-ondelaycircuits.Ahighvoltagediodeisprovidedtochargethehighsidegatedrivebootstrapcapacitor.Therobustlevelshifttechnologyoperatesathighspeedwhileconsuminglowpowerandprovidescleanoutputtransitions.Under-voltagelockoutdisablesthegatedriverwheneitherthelowsideorthebootstrappedhighsidesupplyvoltageisbelowtheop-eratingthreshold.TheLM5105isofferedinthethermallyenhanced10-pinLLPplasticpackage.
nnnnnnnnnn
1.8Apeakgatedrivecurrent
Bootstrapsupplyvoltagerangeupto118VDCIntegratedbootstrapdiodeSingleTTLcompatibleInput
Programmableturn-ondelays(Dead-time)EnableInputpin
Fastturn-offpropagationdelays(26nstypical)Drives1000pFwith15nsriseandfalltimeSupplyrailunder-voltagelockoutLowpowerconsumption
TypicalApplications
nSolidStatemotordrives
nHalfandFullBridgepowerconvertersnTwoswitchforwardpowerconverters
Features
nDrivesbothahighsideandlowsideN-channelMOSFET
Package
nLLP-10(4mmx4mm)
SimplifiedBlockDiagram
20137502
FIGURE1.
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LM5105ConnectionDiagram
20137501
10-LeadLLP
SeeNSNumberSDC10A
OrderingInformation
OrderingNumberLM5105SDLM5105SDX
PackageType
LLP-10LLP-10
NSCPackageDrawing
SDC10ASDC10A
SuppliedAs
1000shippedasTape&Reel4500shippedasTape&Reel
PinDescriptions
Pin12
NameVDDHB
Description
PositivegatedrivesupplyHighsidegatedriverbootstraprailHighsidegatedriveroutput
HighsideMOSFETsourceconnectionNotConnected
Deadtimeprogrammingpin
AresistorfromRDTtoVSSprogramstheturn-ondelayofboththehighandlowsideMOSFETs.TheresistorshouldbeplacedclosetotheICtominimizenoisecouplingfromadjacentPCboardtraces.TTLcompatiblethresholdwithhysteresis.LOandHOareheldinthelowstatewhenENislow.
TTLcompatiblethresholdwithhysteresis.ThehighsideMOSFETisturnedonandthelowsideMOSFETturnedoffwhenINishigh.Allsignalsarereferencedtothisground.
ConnecttothegateofthelowsideN-MOSdevicewithashort,lowinductancepath.
ApplicationInformation
DecoupleVDDtoVSSusingalowESR/ESLcapacitor,placedasclosetotheICaspossible.
ConnectthepositiveterminalofbootstrapcapacitortotheHBpinandconnectnegativeterminaltoHS.TheBootstrapcapacitorshouldbeplacedasclosetoICaspossible.
ConnecttothegateofhighsideN-MOSdevicethroughashort,lowinductancepath.
ConnecttothenegativeterminalofthebootststrapcapacitorandtothesourceofthehighsideN-MOSdevice.
3456
HOHSNCRDT
78910
ENINVSSLO
LogicinputfordriverDisable/Enable
LogicinputforgatedriverGroundreturn
Lowsidegatedriveroutput
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LM5105AbsoluteMaximumRatings(Note1)
IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/Distributorsforavailabilityandspecifications.VDDtoVSSHBtoHSINandENtoVSSLOtoVSSHOtoVSSHStoVSS(Note6)HBtoVSSRDTtoVSSJunctionTemperature
–0.3Vto+18V–0.3Vto+18V–0.3VtoVDD+0.3V–0.3VtoVDD+0.3VHS–0.3VtoHB+0.3V
−5Vto+100V
118V
–0.3Vto5V
+150˚C
StorageTemperatureRangeESDRatingHBM(Note2)
–55˚Cto+150˚C
2kV
RecommendedOperatingConditions
VDDHS(Note6)HB
HSSlewRateJunctionTemperature
+8Vto+14V–1Vto100V
HS+8VtoHS+14V
<50V/ns
–40˚Cto+125˚C
SpecificationsinstandardtypefaceareforTJ=+25˚C,andthoseinboldface
typeapplyoverthefulloperatingjunctiontemperaturerange.Unlessotherwisespecified,VDD=HB=12V,VSS=HS=0V,EN=5V.NoloadonLOorHO.RDT=100kΩ(Note4).Symbol
SUPPLYCURRENTSIDDIDDOIHBIHBOIHBSIHBSOVILVIHRpdVRDTIRDTVDDRVDDHVHBRVHBHVDLVDHRDVOLLVOHLIOHLIOLLVOLHVOHHIOHHVDDQuiescentCurrentVDDOperatingCurrentTotalHBQuiescentCurrentTotalHBOperatingCurrentHBtoVSSCurrent,QuiescentHBtoVSSCurrent,OperatingLowLevelInputVoltageThresholdHighLevelInputVoltageThresholdInputPulldownResistancePinINandENNominalVoltageatRDTRDTPinCurrentLimitVDDRisingThresholdVDDThresholdHysteresisHBRisingThresholdHBThresholdHysteresisLow-CurrentForwardVoltageHigh-CurrentForwardVoltageDynamicResistanceLow-LevelOutputVoltageHigh-LevelOutputVoltagePeakPullupCurrentPeakPulldownCurrentLow-LevelOutputVoltageHigh-LevelOutputVoltagePeakPullupCurrent
IVDD-HB=100µAIVDD-HB=100mAIVDD-HB=100mAILO=100mAILO=–100mA,VOHL=VDD–VLOLO=0VLO=12VIHO=100mAIHO=–100mA,VOHH=HB–HOHO=0V
5.7
RDT=0V
1002.70.756.0
IN=EN=0Vf=500kHzIN=EN=0Vf=500kHzHS=HB=100Vf=500kHz
0.8
0.341.650.061.30.050.11.81.820031.56.90.56.60.40.60.850.80.250.351.81.60.250.351.8
0.40.550.91.11.50.40.557.12.25003.32.257.40.630.2310
mAmAmAmAµAmAVVkΩVmAVVVVVVΩVVAAVVA
Parameter
Conditions
Min
Typ
Max
Units
ElectricalCharacteristics
INPUTINandEN
DEAD-TIMECONTROLS
UNDERVOLTAGEPROTECTION
BOOTSTRAPDIODE
LOGATEDRIVER
HOGATEDRIVER
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LM5105ElectricalCharacteristicsSpecificationsinstandardtypefaceareforTJ=+25˚C,andthoseinboldfacetype
applyoverthefulloperatingjunctiontemperaturerange.Unlessotherwisespecified,VDD=HB=12V,VSS=HS=0V,EN=5V.NoloadonLOorHO.RDT=100kΩ(Note4).(Continued)SymbolIOLHθJATHERMALRESISTANCE
JunctiontoAmbient
(Note3),(Note5)
40
˚C/W
Parameter
PeakPulldownCurrent
Conditions
HO=12V
Min
Typ1.6
Max
UnitsA
SpecificationsinstandardtypefaceareforTJ=+25˚C,andthoseinboldface
typeapplyoverthefulloperatingjunctiontemperaturerange.Unlessotherwisespecified,VDD=HB=12V,VSS=HS=0V,NoLoadonLOorHO(Note4).SymboltLPHLtHPHLtLPLHtHPLHtLPLHtHPLHten,tsdDT1,DT2MDTtR,tFtBSParameter
LowerTurn-OffPropagationDelayUpperTurn-OffPropagationDelayLowerTurn-OnPropagationDelayUpperTurn-OnPropagationDelayLowerTurn-OnPropagationDelayUpperTurn-OnPropagationDelayEnableandShutdownpropagationdelayDead-timeLOOFFtoHOON&HOOFFtoLOON
Dead-timematchingEitherOutputRise/FallTime
BootstrapDiodeTurn-OnorTurn-OffTime
RDT=100kRDT=10kRDT=100kCL=1000pF
IF=20mA,IR=200mARDT=100kRDT=100kRDT=10kRDT=10k
4854857575
Conditions
Min
Typ26265955951051052857080501550
ns
Max5656705705150150
Unitsnsnsnsnsnsnsnsµs
SwitchingCharacteristics
Note1:AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothecomponentmayoccur.OperatingRatingsareconditionsunderwhichoperationofthedeviceisguaranteed.OperatingRatingsdonotimplyguaranteedperformancelimits.Forguaranteedperformancelimitsandassociatedtestconditions,seetheElectricalCharacteristicstables.
Note2:Thehumanbodymodelisa100pFcapacitordischargedthrougha1.5kΩresistorintoeachpin.Pin2,Pin3andPin4areratedat500V.
Note3:4layerboardwithCufinishedthickness1.5/1.0/1.0/1.5oz.Maximumdiesizeused.5xbodylengthofCutraceonPCBtop.50x50mmgroundandpowerplanesembeddedinPCB.SeeApplicationNoteAN-1187.
Note4:MinandMaxlimitsare100%productiontestedat25˚C.LimitsovertheoperatingtemperaturerangeareguaranteedthroughcorrelationusingStatisticalQualityControl(SQC)methods.LimitsareusedtocalculateNational’sAverageOutgoingQualityLevel(AOQL).
Note5:TheθJAisnotaconstantforthepackageanddependsontheprintedcircuitboarddesignandtheoperatingconditions.
Note6:IntheapplicationtheHSnodeisclampedbythebodydiodeoftheexternallowerN-MOSFET,thereforetheHSvoltagewillgenerallynotexceed-1V.Howeverinsomeapplications,boardresistanceandinductancemayresultintheHSnodeexceedingthisstatedvoltagetransiently.
IfnegativetransientsoccuronHS,theHSvoltagemustneverbemorenegativethanVDD-15V.Forexample,ifVDD=10V,thenegativetransientsatHSmustnotexceed-5V.
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LM5105TypicalPerformanceCharacteristics
VDDOperatingCurrentvsFrequency
OperatingCurrentvsTemperature
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QuiescentCurrentvsSupplyVoltageQuiescentCurrentvsTemperature
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HBOperatingCurrentvsFrequencyHO&LOPeakOutputCurrentvsOutputVoltage
20137516
20137517
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LM5105TypicalPerformanceCharacteristics
DiodeForwardVoltage
(Continued)
UndervoltageHysteresisvsTemperature
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20137518
UndervoltageRisingThresholdvsTemperatureLO&HO-HighLevelOutputVoltagevsTemperature
2013751920137520
LO&HO-LowLevelOutputVoltagevsTemperatureInputThresholdvsTemperature
2013752120137522
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LM5105TypicalPerformanceCharacteristics
Dead-TimevsRTResistorValue
(Continued)
Dead-TimevsTemperature(RT=10k)
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20137526
Dead-TimevsTemperature(RT=100k)
20137527
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LM5105TimingDiagrams
20137503
LM5105Input-OutputWaveforms
FIGURE2.
20137504
LM5105SwitchingTimeDefinitions:tLPLH,tLPHL,tHPLH,tHPHLFIGURE3.
OperationalNotes
TheLM5105isasinglePWMinputGateDriverwithEnablethatoffersaprogrammabledeadtime.ThedeadtimeissetwitharesistorattheRDTpinandcanbeadjustedfrom100nsto600ns.ThewidedeadtimeprogrammingrangeprovidestheflexibilitytooptimizedrivesignaltimingforawiderangeofMOSFETSandapplications.
TheRDTpinisbiasedat3Vandcurrentlimitedto1mAmaximumprogrammingcurrent.Thetimedelaygeneratorwillaccommodateresistorvaluesfrom5kto100kwithadeadtimetimethatisproportionaltotheRDTresistance.GroundingtheRDTpinprogramstheLM5105todrivebothoutputswithminimumdeadtime.
STARTUPANDUVLO
Bothtopandbottomdriversincludeunder-voltagelockout(UVLO)protectioncircuitrywhichmonitorsthesupplyvolt-age(VDD)andbootstrapcapacitorvoltage(HB–HS)inde-pendently.TheUVLOcircuitinhibitseachdriveruntilsuffi-cientsupplyvoltageisavailabletoturn-ontheexternalMOSFETs,andtheUVLOhysteresispreventschatteringduringsupplyvoltagetransitions.WhenthesupplyvoltageisappliedtotheVDDpinofLM5105,thetopandbottomgatesareheldlowuntilVDDexceedstheUVLOthreshold,typicallyabout6.9V.AnyUVLOconditiononthebootstrapcapacitorwilldisableonlythehighsideoutput(HO).
20137530
LM5105Enable:tsdFIGURE4.
20137531
LM5105Dead-time:DT
FIGURE5.
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LM5105OperationalNotes
LAYOUTCONSIDERATIONS
(Continued)
POWERDISSIPATIONCONSIDERATIONS
ThetotalICpowerdissipationisthesumofthegatedriverlossesandthebootstrapdiodelosses.Thegatedriverlossesarerelatedtotheswitchingfrequency(f),outputloadcapacitanceonLOandHO(CL),andsupplyvoltage(VDD)andcanberoughlycalculatedas:
PDGATES=2•f•CL•VDD2TherearesomeadditionallossesinthegatedriversduetotheinternalCMOSstagesusedtobuffertheLOandHOoutputs.Thefollowingplotshowsthemeasuredgatedriverpowerdissipationversusfrequencyandloadcapacitance.Athigherfrequenciesandloadcapacitancevalues,thepowerdissipationisdominatedbythepowerlossesdrivingtheoutputloadsandagreeswellwiththeaboveequation.Thisplotcanbeusedtoapproximatethepowerlossesduetothegatedrivers.
GateDriverPowerDissipation(LO+HO)VCC=12V,NeglectingDiodeLosses
Theoptimumperformanceofhighandlowsidegatedriverscannotbeachievedwithouttakingdueconsiderationsduringcircuitboardlayout.Followingpointsareemphasized.1.
AlowESR/ESLcapacitormustbeconnectedclosetotheIC,andbetweenVDDandVSSpinsandbetweenHBandHSpinstosupporthighpeakcurrentsbeingdrawnfromVDDduringturn-onoftheexternalMOSFET.
2.Topreventlargevoltagetransientsatthedrainofthetop
MOSFET,alowESRelectrolyticcapacitormustbecon-nectedbetweenMOSFETdrainandground(VSS).3.
Inordertoavoidlargenegativetransientsontheswitchnode(HS)pin,theparasiticinductancesinthesourceoftopMOSFETandinthedrainofthebottomMOSFET(synchronousrectifier)mustbeminimized.
Groundingconsiderations:
a)ThefirstpriorityindesigninggroundingconnectionsistoconfinethehighpeakcurrentsfromcharginganddischargingtheMOSFETgateinaminimalphysicalarea.Thiswilldecreasetheloopinductanceandmini-mizenoiseissuesonthegateterminaloftheMOSFET.TheMOSFETsshouldbeplacedascloseaspossibletothegatedriver.
b)Thesecondhighcurrentpathincludesthebootstrapcapacitor,thebootstrapdiode,thelocalgroundrefer-encedbypasscapacitorandlowsideMOSFETbodydiode.Thebootstrapcapacitorisrechargedonthecycle-by-cyclebasisthroughthebootstrapdiodefromthegroundreferencedVDDbypasscapacitor.There-chargingoccursinashorttimeintervalandinvolveshighpeakcurrent.Minimizingthislooplengthandareaonthecircuitboardisimportanttoensurereliableoperation.TheresistorontheRDTpinmustbeplacedveryclosetotheICandseperatedfromhighcurrentpathstoavoidnoisecouplingtothetimedelaygeneratorwhichcoulddisrupttimeroperation.
4.
5.
20137505
Thebootstrapdiodepowerlossisthesumoftheforwardbiaspowerlossthatoccurswhilechargingthebootstrapcapacitorandthereversebiaspowerlossthatoccursduringreverserecovery.Sinceeachoftheseeventshappensoncepercycle,thediodepowerlossisproportionaltofrequency.Largercapacitiveloadsrequiremorecurrenttorechargethebootstrapcapacitorresultinginmorelosses.Higherinputvoltages(VIN)tothehalfbridgeresultinhigherreverserecoverylosses.Thefollowingplotwasgeneratedbasedoncalculationsandlabmeasurementsofthedioderecoverytimeandcurrentunderseveraloperatingconditions.Thiscanbeusefulforapproximatingthediodepowerdissipation.
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LM5105OperationalNotes
(Continued)
DiodePowerDissipationVIN=80V
ThetotalICpowerdissipationcanbeestimatedfromtheaboveplotsbysummingthegatedrivelosseswiththebootstrapdiodelossesfortheintendedapplication.Becausethediodelossescanbesignificant,anexternaldiodeplacedinparallelwiththeinternalbootstrapdiode(refertoFigure6)andcanbehelpfulinremovingpowerfromtheIC.Forthistobeeffective,theexternaldiodemustbeplacedclosetotheICtominimizeseriesinductanceandhaveasignificantlylowerforwardvoltagedropthantheinternaldiode.HSTransientVoltagesBelowGround
TheHSnodewillalwaysbeclampedbythebodydiodeofthelowerexternalFET.Insomesituations,boardresis-tancesandinductancescancausetheHSnodetotran-sientlyswingseveralvoltsbelowground.TheHSnodecanswingbelowgroundprovided:1.
HSmustalwaysbeatalowerpotentialthanHO.PullingHOmorethan-0.3VbelowHScanactivateparasitictransistorsresultinginexcessivecurrenttoflowfromtheHBsupplypossiblyresultingindamagetotheIC.ThesamerelationshipistruewithLOandVSS.Ifnecessary,aSchottkydiodecanbeplacedexternallybetweenHOandHSorLOandGNDtoprotecttheICfromthistypeoftransient.ThediodemustbeplacedasclosetotheICpinsaspossibleinordertobeeffective.
2.HBtoHSoperatingvoltageshouldbe15Vorless.
Hence,iftheHSpintransientvoltageis-5V,VDDshouldbeideallylimitedto10VtokeepHBtoHSbelow15V.3.AlowESRbypasscapacitorbetweenHBtoHSaswell
asVCCtoVSSisessentialforproperoperation.ThecapacitorshouldbelocatedattheleadsoftheICtominimizeseriesinductance.ThepeakcurrentsfromLOandHOcanbequitelarge.AnyseriesinductanceswiththebypasscapacitorwillcausevoltageringingattheleadsoftheICwhichmustbeavoidedforreliableop-eration.
20137506
DiodePowerDissipationVIN=40V
20137507
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LM5105OperationalNotes
(Continued)
LM5105DrivingMOSFETsConnectedinHalf-BridgeConfiguration
20137508
FIGURE6.
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LM5105100VHalfBridgeGateDriverwithProgrammableDead-timePhysicalDimensions
inches(millimeters)unlessotherwisenoted
Notes:Unlessotherwisespecified
1.2.3.
Standardleadfinishtobe200microinches/5.00micrometersminimumtin/lead(solder)oncopper.Pin1identificationtohavehalfoffullcircleoption.NoJEDECregistrationasofFeb.2000.
LLP-10OutlineDrawingNSPackageNumberSDC10A
Nationaldoesnotassumeanyresponsibilityforuseofanycircuitrydescribed,nocircuitpatentlicensesareimpliedandNationalreservestherightatanytimewithoutnoticetochangesaidcircuitryandspecifications.Forthemostcurrentproductinformationvisitusatwww.national.com.LIFESUPPORTPOLICY
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