专利名称：STRUCTURE AND PROCESS FOR
CONDUCTIVE CONTACT INTEGRATION
发明人：YANG, Chih-chao,GIGNAC, Lynne M.申请号：EP08823312.7申请日：20080923公开号：EP2283513A1公开日：20110216
摘要：A semiconductor structure including a highly reliable high aspect ratio contactstructure in which key-hole seam formation is eliminated is provided. The key-hole seamformation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectricmaterial. The densified noble metal-containing liner is located atop a diffusion barrier andboth those elements separate the conductive material of the inventive contact structurefrom a conductive material of an underlying semiconductor structure. The densifiednoble metal-containing liner of the present invention is formed by deposition of a noblemetal-containing material having a first resistivity and subjecting the deposited noblemetal-containing material to a densification treatment process (either thermal or plasma)that decreases the resistivity of the deposited noble metal-containing material to a lowerresistivity.
申请人：International Business Machines Corporation
地址：One New Orchard Road Armonk, NY 10504 US
国籍：US
代理机构：Litherland, David Peter
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