专利名称：Method of manufacturing a raised capacitor
electrode
发明人：MAZURE-ESPEJO, CARLOS, DR.,WEINRICH,
VOLKER, DR.
申请号：EP98102023.3申请日：19980205公开号：EP0859405A3公开日：20000426
专利附图：
摘要：A process for capacitor electrode production in an IC involves: (a) providing asubstrate with a raised basic structure (8) of conductive or non-conductive substitute
material having the capacitor electrode shape; (b) sputter depositing conductiveelectrode material (9) to a thickness which is greater on the top and side walls of thebasic structure than on the adjacent substrate surface; and (c) anisotropically etching theelectrode material away from the substrate surface. Preferably, the electrode material isplatinum and the basic structure consists of the substrate material.
申请人：SIEMENS AKTIENGESELLSCHAFT
地址：Wittelsbacherplatz 2 80333 München DE
国籍：DE
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