专利名称：Ferroelectric memory and method for
manufacturing the same
发明人：Takumi Mikawa申请号：US10957618申请日：20041005公开号：US06965141B2公开日：20051115
专利附图：
摘要：A capacitor upper electrode and a wiring are electrically connected to eachother by using a plug and a conductive layer formed below a capacitive element withoutusing a plug that directly connects the capacitor upper electrode to the wiring provided
thereon via an interlayer insulating film therebetween. Alternatively, the capacitor upperelectrode is covered by a conductive hydrogen barrier film, and the capacitor upperelectrode and the wiring are electrically connected to each other via both a plugconnecting the wiring and the conductive hydrogen barrier film to each other and theconductive hydrogen barrier film.
申请人：Takumi Mikawa
地址：Kyoto JP
国籍：JP
代理机构：Nixon Peabody LLP
代理人：Donald R. Studebaker
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