KGF1321S资料

¡ electronic componentsThis version: Jul. 1998

Previous version: Jan. 1998KGF1321S¡ electronic componentsKGF1321S

Power FET (Ceramic Package Type)

GENERAL DESCRIPTION

The KGF1321S, housed in a SMD-type ceramic package, is a discrete UHF-band power FET thatfeatures high efficiency, high output power, and low current operation. The KGF1321Sspecifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; externalimpedance-matching circuits are also required. Because of its high efficiency, high output power(more than 31.5 dBm), and SMD package, the KGF1321S is ideal as a transmitter-final-stageamplifier for personal handy phones, such as analog cellular phones.

FEATURES

•High output power: 31.5 dBm (min.)•High efficiency: 70% (min.)

•Low thermal resistance: 18°C/W (typ.)•Package: 3PFP

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KGF1321S

MARKING

(1)(2)K1321SX X X XPRODUCT NAMELOT NUMBERMONTHLY LOT NUMBER(3)PRODUCTION MONTH (1-9,X,Y,Z)PRODUCTION YEAR (LOWEST DIGIT)(1)Gate(2)Source(3)DrainCIRCUIT

Drain(3)Gate(1)Source(2)2/7

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KGF1321S

ABSOLUTE MAXIMUM RATINGS

ItemDrain-source voltageGate-source voltageDrain currentTotal power dissipationChannel temperatureStorage temperatureSymbolVDSVGSIDSPtotTchTstgConditionTa = 25°CTa = 25°CTa = 25°CTa = Tc = 25°C——UnitVVAW°C°CMin.—–6.0———–45Max.100.435150125ELECTRICAL CHARACTERISTICS

ItemGate-source leakage currentGate-drain leakage currentDrain-source leakage currentDrain currentGate bias Q-pointOutput powerDrain efficiencyThermal resistanceSymbolIGSSIGDOIDS(off)IDSSVGSQPOhDRthConditionVGS = –6 VVGD = –16 VVDS = 10 V, VGS = –6 VVDS = 1.5 V, VGS = 0 VVDS = 5.8 V, IDSQ = 175 mA(*1), PIN = 20 dBm(*1), PIN = 20 dBmChannel to caseUnitmAmAmAAVdBm%°C/WMin.———2.0–3.3531.570—Typ.———————18(Ta = 25°C)Max.0.10.51.5—–2.45———*1Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 175 mA

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CHARACTERISTICS

KGF1321S

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¡ electronic componentsTypical S Parameters

VDS = 5.8 V, IDS = 175 mA

Freq(MHz)MAG(S11)ANG(S11)MAG(S21)ANG(S21)MAG(S12)ANG(S12)MAG(S22)ANG(S22)

500.0600.0700.0800.0900.01000.01100.01200.01300.01400.01500.01600.01700.01800.01900.02000.02100.02200.02300.02400.02500.02600.02700.02800.02900.03000.0

0.9340.9330.9310.9330.9300.9290.9280.9260.9260.9230.9230.9220.9170.9200.9140.9150.9110.9110.9080.9070.9070.9020.9000.8980.8990.894

–147.47–153.34–157.83–161.16–164.05–166.41–168.49–170.28–171.90–173.38–174.79–176.22–177.31–178.52–179.85179.28177.85176.88175.84174.63173.85172.51171.60170.55169.48168.51

3.8703.2792.8282.5112.2402.0301.8571.7071.5921.4731.3891.3021.2361.1731.1091.0661.0120.9760.9370.8990.8660.8380.8080.7900.7530.740

96.3491.7987.7284.0581.0877.9775.3572.5069.7567.3264.7762.6260.1057.7755.5353.3151.0049.0246.7144.8742.3340.7738.2736.4834.2732.15

0.0380.0390.0400.0410.0410.0420.0420.0430.0430.0440.0450.0450.0460.0460.0470.0480.0480.0490.0500.0500.0510.0510.0530.0530.0540.054

21.9119.8418.5317.9117.5816.7616.7816.7116.9316.4616.9316.3217.3517.0416.9417.2516.7416.7817.1616.6817.7016.9517.1517.3317.2217.56

0.6660.6710.6740.6740.6780.6780.6770.6780.6770.6790.6750.6780.6760.6780.6760.6760.6740.6770.6730.6740.6740.6750.6730.6740.6750.673

–175.31–176.79–177.80–178.81–179.43179.49179.10178.16177.44176.95176.29175.63175.18174.46173.46173.10172.11171.75170.74170.18169.41168.69167.92167.17166.38165.56

KGF1321S

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¡ electronic componentsTypical S Parameters

KGF1321S

VDS = 5.8 V, IDS = 175 mAFrequency : 0.5 to 3.0 GHzZ0 = 50 W6/7

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KGF1321S

PACKAGE DIMENTIONS

1.1±0.20.51±0.1550.0±5.501X5.0A1.±M04 ±.624..543.8±0.153.5±0.15500.±5210.1.9±0.153.0±0.156.3±0.152.80551.0400.1..±2375±.31.2.052.85METALIZATIONPackage materialAl203Lead frame materialFe-Ni-Co alloyPin treatmentNi/Au plating(Unit: mm)plate thicknessAu:1.0 mm or more7/7