APPARATUS FOR SPUTTERING AND A METHOD OF FABRICATI

专利名称：APPARATUS FOR SPUTTERING AND A

METHOD OF FABRICATING AMETALLIZATION STRUCTURE

发明人：WEICHART, Jürgen,ELGHAZZALI,

Mohamed,BAMMESBERGER,Stefan,MINKOLEY, Dennis

申请号：EP09728042.4申请日：20090403公开号：EP2268844A1公开日：20110105

摘要：A method of depositing a metallization structure (1) comprises depositing aTaN layer (4) by applying a power supply between an anode and a target in a plurality ofpulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seedlayer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the powersupply in a plurality of pulses and applying a high-frequency signal to a pedestalsupporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

申请人：OC Oerlikon Balzers AG

地址：Iramali 18 9496 Balzers LI

国籍：LI

代理机构：Moore, Joanne Camilla

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