Method of forming submicron grooves in, for exampl

专利名称：Method of forming submicron grooves in,

for example, semiconductor material anddevices obtained by means of this method

发明人：Maas, Henricus Godefridus Rafael,Appels,

Johannes Arnoldus

申请号：EP85201462.0申请日：19850913公开号：EP0178000A2公开日：19860416

专利附图：

摘要：On a layer having a stepped relief, such as a masking layer (4) having openings

(5) on a substrate region (2) is provided a first layer (6), which, whilst maintaining thestepped relief, is covered by a second masking layer (8) and a convertible layer (9). Byconversion of the convertible layer (9) (by means of ion implantation, oxidation,

silicidation) this layer becomes selectively etchable. After removal of the non-convertedparts, an intermediate mask (8) is formed with an opening in the second masking layer (8)along the edge of a depression (7). By means of the mask (8) thus obtained, grooves (11)are formed by anisotropic etching in the first layer (6) and, as the case may be, in thesubjacent substrate region (2). When grooves are formed in a substrate region (2) ofsemiconductor material, these grooves may be filled with oxide (25) for forming insulatedregions, If a first layer (6) of polycrystalline silicon is used on a substrate region (2) ofsilicon, this layer (6) can serve as a doping source and a connection, respectively. Thus,various kinds of transistors (MOSFET and bipolar transistors) can be manufactured. Thesecond masking layer (8) and the convertible layer (9) may be realized, if required, as asingle layer (65).

申请人：Philips Electronics N.V.

地址：Groenewoudseweg 1 5621 BA Eindhoven NL

国籍：NL

代理机构：Rensen, Jan Geert

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