专利名称：Semiconductor arrangement having a
MOSFET structure and a zener device
发明人：Jenö Tihanyi申请号：US10901634申请日：20040729公开号：US07199403B2公开日：20070403
专利附图：
摘要：The invention relates to a semiconductor arrangement having a MOSFETstructure and an active zener function. A n-doped zone and a p-doped zone are providedat the bottom of a trench for the purpose of forming zener diodes, the n-doped zone
being directly connected to the gate electrode.
申请人：Jenö Tihanyi
地址：Kirchheim DE
国籍：DE
代理机构：Dicke, Billig & Czaja, PLLC
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