High frequency semiconductor device

专利名称：High frequency semiconductor device发明人：Toshifumi Nakatani申请号：US10147067申请日：20020517

公开号：US20020171115A1公开日：20021121

专利附图：

摘要：A high frequency (HF) semiconductor device includes a semiconductor

substrate. An electroconductor layer is provided on the semiconductor substrate. A firstinsulator layer electrically insulates the electroconductor layer from the semiconductorsubstrate. N pieces of wires are provided on the semiconductor substrate, and N-phase

signals (where N represents a positive integer greater than 2) are fed to the wires. Asecond insulator layer electrically insulates the wires from the electroconductor layerand the semiconductor substrate. Npieces of the wires are provided on one side of theelectroconductor layer (where Nrepresents 0 or a positive integer equaling or less thanN). Npieces of the wires are provided on the other side of the electroconductor layer(where Nrepresents 0 or a positive integer satisfying NNN).

申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

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