MMBZ6V2A资料

MMBZ5V6A SeriesDual Common Anode Zener TVS

SMALL SIGNALZENER DIODES300m WATTS3-26 VOLTSFeatures:*Allows Either Two Separate Unidirectional Configuations or a Single Bidirectional Configuations.*Low Leakage Current.

*24-40 Watts Peak Power Protection.*Excellent Clamping Capability.

*ESD Rating of Class N(exceeding 16KV)per the Human Body Model.*Transient Voltage Suppressors Encapsulated in a SOT-23 Package.

312Mechanical Data:*Case: Molded Epoxy*Marking: Marking Code*Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec.*Weight: 0.008grams(approx.)SOT-23SOT-23 Outline Dimensions

AUnit:mm

TOP VIEWBCEGHDKLJMDimMinMaxA0.350.51B1.191.40C2.103.00D0.851.05E0.461.00G1.702.10H2.703.10J0.010.13K0.891.10L0.300.61M0.0760.25WEITRON

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MMBZ5V6A SeriesMaximum Ratings (T =25 C Unless otherwise Noted)A

Characteristics(1)_Peak Power Dissipation @ 1.0 ms @ T 25 CL_Electrical Characteristics(T =25 C unless otherwise noted)A

(Circuit tied to Pins 1 and 3 or 2 and 3) UNIDIRECTIONALSymbolIPPVCVRWMIRθVBRITVBRIFVFZZTIZKZZKParameterMaximum Reverse Peak Pulse CurrentClamping Voltage @ IPPWorking Peak Reverse VotlageMaximum Reverse Leakage Current @ VRWMBreakdown Voltage @ ITTest CurrentMaximum Temperature Coefficient of VBRForward CurrentForward Voltage @ IFMaximum Zener Impedance @ IZTReverse CurrentMaximum Zener Impedance @ IZKIPPIIF___VCVBRVRWMIRVFITVUni-Directional TVSDevice MarkingItemMMBZ5V6A SeriesMarkingXX=Specific Device Code(See Table on Page 3)Eqivalent Circuit diagram312WEITRON

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MMBZ5V6A SeriesELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)(VF = 0.9 V Max @ IF = 10 mA)24 WATTSBreakdown VoltageMax Zener (5)Impedance @ ITMax5.886.517.149.5610.5VC @IPP (6)DeviceMMBZ5V6AMMBZ6V2AMMBZ6V8AMMBZ9V1ADeviceMarking5A66A26A89A110AVRWMVolts3.03.04.56.06.5IR @VRWMuA5.00.50.50.30.3 (V)VBR (4)ZZT@ IZTΩ11ZZK @ IZKΩ1600VCV8.08.79.61414.2IPPA3.02.762.51.71.7󰀀θVBRMin5.325.896.468.659.50Nom5.66.26.89.110mA201.01.01.01.0mA0.25mV/󰀀C1.262.803.47.57.5------------MMBZ10VA(VF = 0.9 V Max @ IF = 10 mA)VRWMVolts8.51214.517222640 WATTSIR@VRWMnA2005050505050Breakdown VoltageV BR (4) (V)Min11.4014.2517.1019.0025.6531.35VC @ IPP (6)@ ITVCV172125284046DeviceMMBZ12VAMMBZ15VAMMBZ18VAMMBZ20VAMMBZ27VAMMBZ33VADeviceMarking12A15A18A20A27A33AIPPA2.351.91.61.41.00.87󰀀θVBRNom121518202733Max12.6015.7518.9021.0028.3534.65mA1.01.01.01.01.01.0mV/󰀀C7.512.315.317.224.330.44.VBR measured at pulse test current IT at an ambient temperature of 25C.5.ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.6.Surge current waveform per Fig 5 and derate per Fig 6WEITRON

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MMBZ5V6A Series18

BREAKDOWN VOLTAGE(V)WEITRON1000100I (nA)R1512963

VB @ ITR101

0.10.01-400-400+50

TEMPERATURE( C)

+100+150+25+85+125TEMPERATURE( C)

FIG.1 Typical Breakdown Voltage Versus Temperature

(Upper curve for each voltage is bidirectional mode,)lower curve is undirectional mode)

FIG.2 Typical Leakage Current Versus Temperature

320280C, CPACITANCE( P F)PD , POWER DISSIPATION(mW)30025020015010050002550751001251501752402001601208040001BIAS(V)

ALUMINA SUBSTRATE5.6 V15 VFR-5 BOARD23TEMPERATURE( C)

FIG.3 Typical Capacitance Versus Bias Voltage

PEAK PULSE DERATING IN % OF PEAKPOWER OR CURRENT @ Ta =25 CFIG.4 Steady State Power Derating Curve

(Upper curve for each voltage is bidirectional mode,)

lower curve is undirectional mode)

PULSE WIDTH (tP) IS DEFINEDAS THAT POINT WHERE THEPEAK CURRENT DECAYS TO50% OF IPP._t 10us r<100VALUE(%)PEAK VALUE-IPP100

9080706050403020100

HALF VALUE =IPP250tP00123t, TIME(ms)

40255075100125150175200

T , AMBIENT TEMPERATURE( C)a

FIG.5 Pulse Waveform

FIG.6 Pulse Derating Curve

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MMBZ5V6A SeriesWEITRON100PP K , PEAK SURGE POWER(W)RECTANGULARWAVEFORM, TA = 25 CRECTANGULARWAVEFORM, TA = 25 CBIDIRECTIONAL100PP K , PEAK SURGE POWER(W)BIDIRECTIONAL10UNIDIRECTIONAL10UNIDIRECTIONAL10.1110PW, PULSE WIDTH(ms)

100100010.11101001000PW, PULSE WIDTH(ms)

FIG.7 Maximum Non-repetitive Surge

Power, P Versus PWPKPower is defined as V I (pk)where V isRSM xZRSMthe clamping voltage at I (pk).Z

FIG.8 Maximum Non-repetitive Surge

Power, P (NOM)Versus PWPKPower is defined as V (NOM) I (pk)where V (NOM) is xZZZ

the nominal Zener voltage measured at the low test currentused for voltage classification

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