专利名称：METHOD FOR REDUCING POSITIVE
CHARGES ACCUMULATED ON CHIPSDURING ION IMPLANTATION
发明人：Hui-Shen Shih,Kuan-I Huang申请号：US11162906申请日：20050928
公开号：US20070072356A1公开日：20070329
专利附图：
摘要：In the plasma etching process of the integrated circuit, a portion of the chargesfrom the plasma accumulates on the semiconductor device through the conductive
portion of the integrated circuit so as to damage the device. The phenomenonmentioned above is so called antenna effect. In order to decreased the number of theaccumulated charges caused by antenna effect and to alleviate the damage of theaccumulated charges on the device, the conductive photoresist is used in the plasmaetching process. The method for applying the conductive photoresist in the integratedcircuit process is as same as the application method for using the well known standardphotoresist.
申请人：Hui-Shen Shih,Kuan-I Huang
地址：Changhua Hsien TW,Taoyuan County 333 TW
国籍：TW,TW
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容