CD4076BMS
December 1992
CMOS 4 -Bit D-Type Registers
PinoutCD4076BMSTOP VIEWMNQ1Q2Q3Q4CLOCKVSS1234567816VDD15RESET14DATA 113DATA 212DATA 311DATA 410G29G1DATAINPUTDISABLEFeatures•High Voltage Type (20V Rating)•Three State Outputs•Input Disabled Without Gating the Clock•Gated Output Control Lines for Enabling or Disablingthe Outputs•Standardized Symmetrical Output Characteristics•100% Tested for Quiescent Current at 20V•Maximum Input Current of 1µA at 18V Over Full Pack-age Temperature Range; 100nA at 18V and +25oC•Noise Margin (Over Full Package/Temperature Range)-1V at VDD = 5V-2V at VDD = 10V-2.5V at VDD = 15V•5V, 10V and 15V Parametric Ratings•Meets All Requirements of JEDEC Tentative StandardNo. 13B, “Standard Specifications for Description of‘B’ Series CMOS Devices”OUTPUTDISABLEFunctional DiagramDATA INPUTDISABLEG191410G2CLOCK71OUTPUTDISABLEM23NDescriptionCD4076BMS types are four-bit registers consisting of D-typeflip-flops that feature three-state outputs. Data Disable inputsare provided to control the entry of data into the flip-flops.When both Data Disable inputs are low, data at the D inputsare loaded into their respective flip-flops on the next positivetransition of the clock input. Output Disable inputs are alsoprovided. When the Output Disable inputs are both low, thenormal logic states of the four outputs are available to theload. The outputs are disabled independently of the clock bya high logic level at either Output Disable input, and presenta high impedance.The CD4076BMS is supplied in these 16 lead outline pack-ages:Braze Seal DIPFrit Seal DIPCeramic FlatpackH4TH1EH6WD1Q1D213D312114D - TYPEFLIP-FLOPSWITHAND-ORLOGIC4Q256Q3D415RESETQ4VSS = 8VDD = 16CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.1-888-INTERSIL or 321-724-7143|Copyright © Intersil Corporation 1999
File Number
3325
7-1029
元器件交易网www.cecb2b.com
Specifications CD4076BMS
Absolute Maximum RatingsDC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . .-0.5V to +20V(Voltage Referenced to VSS Terminals)Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5VDC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mAOperating Temperature Range. . . . . . . . . . . . . . . .-55oC to +125oCPackage Types D, F, K, HStorage Temperature Range (TSTG). . . . . . . . . . .-65oC to +150oCLead Temperature (During Soldering) . . . . . . . . . . . . . . . . .+265oCAt Distance 1/16 ± 1/32 Inch (1.59mm± 0.79mm) from case for10s MaximumReliability InformationThermal Resistance . . . . . . . . . . . . . . . .θjaθjcCeramic DIP and FRIT Package. . . . .80oC/W20oC/WFlatpack Package . . . . . . . . . . . . . . . .70oC/W20oC/WMaximum Package Power Dissipation (PD) at +125oCFor TA = -55oC to +100oC (Package Type D, F, K). . . . . .500mWFor TA = +100oC to +125oC (Package Type D, F, K) . . . . .DerateLinearity at 12mW/oC to 200mWDevice Dissipation per Output Transistor . . . . . . . . . . . . . . .100mWFor TA = Full Package Temperature Range (All Package Types)Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oCTABLE1.DC ELECTRICAL PERFORMANCE CHARACTERISTICSGROUP ASUBGROUPS12VDD = 18V, VIN = VDD or GNDInput Leakage CurrentIILVIN = VDD or GNDVDD = 20VDD = 18VInput Leakage CurrentIIHVIN = VDD or GNDVDD = 20VDD = 18VOutput VoltageOutput VoltageOutput Current (Sink)Output Current (Sink)Output Current (Sink)Output Current(Source)Output Current(Source)Output Current(Source)Output Current(Source)N Threshold VoltageP Threshold VoltageFunctionalVOL15VOH15IOL5IOL10IOL15IOH5AIOH5BIOH10IOH15VNTHVPTHFVDD = 15V, No LoadVDD = 15V, No Load (Note 3)VDD = 5V, VOUT = 0.4VVDD = 10V, VOUT = 0.5VVDD = 15V, VOUT = 1.5VVDD = 5V, VOUT = 4.6VVDD = 5V, VOUT = 2.5VVDD = 10V, VOUT = 9.5VVDD = 15V, VOUT = 13.5VVDD = 10V, ISS = -10µAVSS = 0V, IDD = 10µAVDD = 2.8V, VIN = VDD or GNDVDD = 20V, VIN = VDD or GNDVDD = 18V, VIN = VDD or GNDVDD = 3V, VIN = VDD or GNDInput Voltage Low(Note 2)Input Voltage High(Note 2)Input Voltage Low(Note 2)Input Voltage High(Note 2)Tri-State OutputLeakageVILVIHVILVIHIOZLVDD = 5V, VOH > 4.5V, VOL < 0.5VVDD = 5V, VOH > 4.5V, VOL < 0.5VVDD = 15V, VOH > 13.5V,VOL < 1.5VVDD = 15V, VOH > 13.5V,VOL < 1.5VVIN = VDD or GNDVOUT = 0VVDD = 20VVDD = 18V31231231, 2, 31, 2, 3111111111778A8B1, 2, 31, 2, 31, 2, 31, 2, 3123LIMITSTEMPERATURE+25oC+125oC-55oC+25oC+125C-55oC+25oC+125oC-55oC+25oC, +125oC, -55oC+25oC, +125oC, -55oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+125oC-55oC+25oC, +125oC, -55oC+25oC, +125oC, -55oC+25oC, +125oC, -55oC+25oC, +125oC, -55oC+25oC+125oC -55oC-3.5-11-0.4-12-0.41.5-4----VVVVµAµAµAoPARAMETERSupply CurrentSYMBOLIDDCONDITIONS(NOTE 1)VDD = 20V, VIN = VDD or GNDMIN----100-1000-100----14.950.531.43.5-----2.80.7VOH >VDD/2MAX10100010---100100010050-----0.53-1.8-1.4-3.5-0.72.8VOL Specifications CD4076BMS TABLE1.DC ELECTRICAL PERFORMANCE CHARACTERISTICSGROUP ASUBGROUPS12VDD = 18VNOTES:1.All voltages referenced to device GND, 100% testing beingimplemented.2.Go/No Go test with limits applied to inputs.3LIMITSTEMPERATURE+25oC+125oC -55oCMIN---MAX0.4120.4UNITSµAµAµAPARAMETERTri-State OutputLeakageSYMBOLIOZHCONDITIONS(NOTE 1)VIN = VDD or GNDVOUT = VDDVDD = 20V3.For accuracy, voltage is measured differentially to VDD.Limit is 0.050V max.TABLE2.AC ELECTRICAL PERFORMANCE CHARACTERISTICSGROUP ASUBGROUPSTEMPERATURE910, 11VDD = 5V, VIN = VDD or GND910, 11+25oC+125oC, -55oC+25oC+125oC, -55oCLIMITSMIN----MAX600810200270UNITSnsnsnsnsPARAMETERPropagation DelayClock to Q OutputTransition TimeSYMBOLTPHLTPLHTTHLTTLHCONDITIONS (Notes 1, 2)VDD = 5V, VIN = VDD or GNDNOTES:1.CL = 50pF, RL = 200K, Input TR, TF < 20ns.2.-55oC and +125oC limits guaranteed, 100% testing being implemented.TABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICSLIMITSPARAMETERSupply CurrentSYMBOLIDDCONDITIONSVDD = 5V, VIN = VDD or GNDNOTES1, 2TEMPERATURE-55oC, +25oC+125oCVDD = 10V, VIN = VDD or GND1, 2-55oC, +25oC+125oCVDD = 15V, VIN = VDD or GND1, 2-55oC, +25oC+125oCOutput VoltageOutput VoltageOutput VoltageOutput VoltageOutput Current (Sink)VOLVOLVOHVOHIOL5VDD = 5V, No LoadVDD = 10V, No LoadVDD = 5V, No LoadVDD = 10V, No LoadVDD = 5V, VOUT = 0.4V1, 21, 21, 21, 21, 2+25oC, +125oC,-55oC+25oC, +125oC,-55oC+25oC, +125oC,-55oC+25oC, +125oC,-55oC+125oC-55oCOutput Current (Sink)IOL10VDD = 10V, VOUT = 0.5V1, 2+125oC-55oCOutput Current (Sink)IOL15VDD = 15V, VOUT = 1.5V1, 2+125oC-55oCOutput Current (Source)IOH5AVDD = 5V, VOUT = 4.6V1, 2+125oC-55oCOutput Current (Source)IOH5BVDD = 5V, VOUT = 2.5V1, 2+125oC-55oCOutput Current (Source)IOH10VDD = 10V, VOUT = 9.5V1, 2+125oC-55oCMIN--------4.959.950.360.640.91.62.44.2------MAX515010300106005050---------0.36-0.64-1.15-2.0-0.9-2.6UNITSµAµAµAµAµAµAmVmVVVmAmAmAmAmAmAmAmAmAmAmAmA7-1031 元器件交易网www.cecb2b.com Specifications CD4076BMS TABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)LIMITSPARAMETEROutput Current (Source)SYMBOLIOH15CONDITIONSVDD =15V, VOUT = 13.5VNOTES1, 2TEMPERATURE+125oC-55oCInput Voltage LowInput Voltage HighPropagation DelayClock to Q OutputPropagation DelayResetVILVIHTPHL1TPLH1TPHL2VDD = 10V, VOH > 9V, VOL <1VVDD = 10V, VOH > 9V, VOL <1VVDD = 10VVDD = 15VVDD = 5VVDD = 10VVDD = 15VPropagation Delay3 - StateTPHZTPLZVDD = 5VVDD = 10VVDD = 15VPropagation Delay3 - StateTPZHTPZLVDD = 5VVDD = 10VVDD = 15VTransition TimeTTHLTTLHTTLHVDD = 10VVDD = 15VVDD = 10VVDD = 15VMaximum Clock InputFrequencyFCLVDD = 5VVDD = 10VVDD = 15VMinimum Data SetupTimeTSVDD = 5VVDD = 10VVDD = 15VMinimum Data Hold TimeReset Pulse WidthTWVDD = 5VVDD = 10VVDD = 15VMinimum Clock PulseWidthTWVDD = 5VVDD = 10VVDD = 15VMinimum Data Input Set-Up TimeTSVDD = 5VVDD = 10VVDD = 15VMaximum Clock InputRise and Fall TimeTRCLTFCLVDD = 5VVDD = 10VVDD = 15VInput CapacitanceCINAny Input1, 21, 21, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 41, 2, 41, 2, 41, 2, 41, 2, 41, 2, 41, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 31, 2, 3, 51, 2, 3, 51, 2, 3, 51, 2+25oC, +125oC,-55oC+25oC, +125oC,-55oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oC+25oCMIN---7---------------368----------------MAX-2.4-4.23-25018046020015030015012030015012010080-----20080601205040200100801801007015557.5UNITSmAmAVVnsnsnsnsnsnsnsnsnsnsnsnsnsnsnsMHzMHzMHznsnsnsnsnsnsnsnsnsnsnsnsµsµsµspFTransition Time7-1032 元器件交易网www.cecb2b.com Specifications CD4076BMS TABLE3.ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)LIMITSPARAMETERNOTES:1.All voltages referenced to device GND.2.The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterizedon initial design release and upon design changes which would affect these characteristics.3.CL = 50pF, RL = 200K, Input TR, TF < 20ns.4.CL = 50pF, RL = 1K, Input TR, TF < 20ns.5.If more than one unit is cascaded, TRCL should be made less than or equal to the sum of the transition time and the fixed propagationdelay of the output of the driving stage for the estimated capacitive load.TABLE4.POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICSLIMITSPARAMETERSupply CurrentN Threshold VoltageN Threshold VoltageDeltaP Threshold VoltageP Threshold VoltageDeltaFunctionalPropagation Delay TimeSYMBOLIDDVNTH∆VTNVTP∆VTPFTPHLTPLHCONDITIONSVDD = 20V, VIN = VDD or GNDVDD = 10V, ISS = -10µAVDD = 10V, ISS = -10µAVSS = 0V, IDD = 10µAVSS = 0V, IDD = 10µAVDD = 18V, VIN = VDD or GNDVDD = 3V, VIN = VDD or GNDVDD = 5V1, 2, 3, 4+25oCNOTES1, 41, 41, 41, 41, 41TEMPERATURE+25oC+25oC+25oC+25oC+25oC+25oCMIN--2.8-0.2-VOH >VDD/2-MAX25-0.2±12.8±1VOL Specifications CD4076BMS TABLE7.TOTAL DOSE IRRADIATIONMIL-STD-883METHOD5005TESTPRE-IRRAD1, 7, 9POST-IRRADTable 4READ AND RECORDPRE-IRRAD1, 9POST-IRRADTable 4CONFORMANCE GROUPSGroup E Subgroup 2TABLE8.BURN-IN AND IRRADIATION TEST CONNECTIONSOSCILLATORFUNCTIONStatic Burn-In 1 Note 1Static Burn-In 2 Note 1Dynamic Burn-In Note 1Irradiation (Note 2)NOTE:1.Each pin except VDD and GND will have a series resistor of 10K± 5%, VDD = 18V± 0.5V2.Each pin except VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V± 0.5VOPEN3 - 63 - 6-3 - 6GROUND1, 2, 7 - 1581, 2, 8 - 10, 158VDD161, 2, 7, 9 -16161, 2, 7, 9 - 163 - 6711 - 149V± -0.5V50kHz25kHzOUTPUTDISABLEMN12**DATA1DATAINPUTDISABLEG1G21491016DQ3VDD**CLQRQ1*DATA213**DQ4Q2CLQRCLOCK7DATA3*12DQ5Q3CLQR* ALL INPUTS PROTECTED BYCMOS PROTECTION NETWORKVDDDATA411DQ68Q4VSS**VSSRESET15CLQRFIGURE 1.CD4076BMS LOGIC DIAGRAM7-1034 元器件交易网www.cecb2b.com CD4076BMS TRUTH TABLEDATA INPUT DISABLERESET100000001 = High Level0 = Low Level1CLOCKX0G1XX1X00XXG2XXX100XXDATADXXXX10XXX = Don’t CareNC = No ChangeNEXT STATEOUTPUTQ0QQQ10QQNCNCNCNCNCWhen either Output Disable M or N is high, the outputs are disabled (high impedance state), however sequential operation of the flip-flops is not affected.Typical Performance CharacteristicsAMBIENT TEMPERATURE (TA) = +25oCAMBIENT TEMPERATURE (TA) = +25oCOUTPUT LOW (SINK) CURRENT (IOL) (mA)OUTPUT LOW (SINK) CURRENT (IOL) (mA)302520151050GATE-TO-SOURCE VOLTAGE (VGS) = 15V15.012.510.07.55.02.505V51015DRAIN-TO-SOURCE VOLTAGE (VDS) (V)10VGATE-TO-SOURCE VOLTAGE (VGS) = 15V10V5V51015DRAIN-TO-SOURCE VOLTAGE (VDS) (V)FIGURE 2.TYPICAL OUTPUT LOW (SINK) CURRENTCHARACTERISTICSDRAIN-TO-SOURCE VOLTAGE (VDS) (V)-15-10-5AMBIENT TEMPERATURE (TA) = +25oCGATE-TO-SOURCE VOLTAGE (VGS) = -5VFIGURE 3.MINIMUM OUTPUT LOW (SINK) CURRENTCHARACTERISTICSDRAIN-TO-SOURCE VOLTAGE (VDS) (V)-15-10-5OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)AMBIENT TEMPERATURE (TA) = +25oCGATE-TO-SOURCE VOLTAGE (VGS) = -5V-500-5-10-1500OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)-10V-20-25-10V-10-15V-30-15V-15FIGURE 4.TYPICAL OUTPUT HIGH (SOURCE) CURRENTCHARACTERISTICSFIGURE 5.MINIMUM OUTPUT HIGH (SOURCE) CURRENTCHARACTERISTICS7-1035 元器件交易网www.cecb2b.com CD4076BMS Typical Performance Characteristics (Continued)PROPAGATION DELAY TIME (tPHL, tPLH) (ns)AMBIENT TEMPERATURE (TA) = +25oCTRANSITION TIME (tTHL, tTLH) (ns)500AMBIENT TEMPERATURE (TA) = +25oC400SUPPLY VOLTAGE (VDD) = 5V300200SUPPLY VOLTAGE (VDD) = 5V15020010V10010V505V10015V0204060801001201400020LOAD CAPACITANCE (CL) (pF)406080100LOAD CAPACITANCE (CL) (pF)FIGURE 6.TYPICAL PROPAGATION DELAY TIME vs LOADCAPACITANCE (CLOCK TO Q)AMBIENT TEMPERATURE (TA) = +25oCLOAD CAPACITANCE (CL) = 50pFFIGURE 7.TYPICAL TRANSITION TIME vs LOADCAPACITANCEPOWER DISSIPATION PER GATE (PD) (µW)105AMBIENT TEMPERATURE (TA) = +25oCSUPPLY VOLTAGE (VDD) = 15V10VMAXIMUM CLOCK FREQUENCY(fCL MAX) (MHz)15864210486421010310286428642864210V5V510CL = 50pFCL = 15pF2468105101520SUPPLY VOLTAGE (VDD) (V)10-1110102103INPUT FREQUENCY (f) (kHz)24682468246824681042468FIGURE 8.TYPICAL MAXIMUM CLOCK INPUT FREQUENCY vsSUPPLY VOLTAGEtWCLOCKtS50%DATAINPUTDIABLE50%tWRESET50%tWFIGURE 9.TYPICAL DYNAMIC POWER DISSIPATION vs FREQUENCY50%tStStTHLQOUTPUTtPHL90%50%10%tPLHtTLHtPHLFIGURE 10.FUNCTIONAL WAVEFORM7-1036 元器件交易网www.cecb2b.com CD4076BMS VDD50%OUTPUT DISABLEtPLZQ OUTPUTQ OUTPUT10%90%10%tPHZtPZHtPZL90%50%VSSVDDVOLVOHVSSTESTCHARACTERtPHZtPLZtPZLtPZHAT DVDDVSSVSSVDDVOLTAGEAT QVSSVDDVDDVSSFIGURE 11.FUNCTIONAL WAVEFORMChip Dimensions and Pad LayoutDimensions in parentheses are in millimetersand are derived from the basic inch dimensionsas indicated. Grid graduations are in mils (10-3 inch)METALLIZATION:PASSIVATION:Thickness: 11kÅ−14kÅ, AL.10.4kÅ - 15.6kÅ, SilaneBOND PADS:0.004 inches X 0.004 inches MINDIE THICKNESS:0.0198 inches - 0.0218 inchesAll Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification.Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time withoutnotice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurateand reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties whichmay result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.For information regarding Intersil Corporation and its products, see web sitehttp://www.intersil.comSales Office HeadquartersNORTH AMERICAIntersil CorporationP. O. Box 883, Mail Stop 53-204Melbourne, FL32902TEL:(321) 724-7000FAX: (321) 724-7240EUROPEIntersil SAMercure Center100, Rue de la Fusee1130 Brussels, BelgiumTEL: (32) 2.724.2111FAX: (32) 2.724.22.05ASIAIntersil (Taiwan) Ltd.Taiwan Limited7F-6, No. 101 Fu Hsing North RoadTaipei, TaiwanRepublic of ChinaTEL: (886) 2 2716 9310FAX: (886) 2 2715 30291037 因篇幅问题不能全部显示，请点此查看更多更全内容