专利名称：Semiconductor devices with copper
interconnects and composite silicon nitridecapping layers
发明人：Minh Van Ngo,Erik Wilson,Hieu Pham,Robert
Huertas,Lu You,Hirokazu Tokuno,AlexanderNickel,Minh Tran
申请号：US11356311申请日：20060217公开号：US07534732B1公开日：20090519
专利附图：
摘要：Cu interconnects are formed with composite capping layers for reducedelectromigration, improved adhesion between Cu and the capping layer, and reducedcharge loss in associated non-volatile transistors. Embodiments include depositing a firstrelatively thin silicon nitride layer having a relatively high concentration of Si—H bonds onthe upper surface of a layer of Cu for improved adhesion and reduced electromigration,and depositing a second relatively thick silicon nitride layer having a relatively lowconcentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.
申请人：Minh Van Ngo,Erik Wilson,Hieu Pham,Robert Huertas,Lu You,HirokazuTokuno,Alexander Nickel,Minh Tran
地址：Fremont CA US,Santa Clara CA US,Milpitas CA US,Hollister CA US,San Jose CAUS,Cupertino CA US,Santa Clara CA US,Milpitas CA US
国籍：US,US,US,US,US,US,US,US
代理机构：McDermott Will & Emery LLP
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