METHOD FOR DETECTING POLARIZATION OF A FERROELECTR

专利名称：METHOD FOR DETECTING POLARIZATION

OF A FERROELECTRIC CAPACITOR IN AFERROELECTRIC MEMORY AND THEREOFSTRUCTURE

发明人：Tung-Cheng Kuo,Hsiang-Lan Lung,Shue-Shuen Chen

申请号：US09772326申请日：20010130

公开号：US20020060922A1公开日：20020523

专利附图：

摘要：A method for detecting polarization of a ferroelectric capacitor in a

ferroelectric memory and thereof structure is provided by detecting polarization of aferroelectric capacitor through a characteristic which present different voltage values byproviding different voltages on the ferroelectric capacitor stay at different polarizationdirections, so that the disadvantages caused by a conventional method for detectingcharge quantity can be improved and a limited size of a capacitance of the cell

ferroelectric capacitor can be solved. The method for detecting comprises the step ofdetecting an output voltage on a connection node between a cell ferroelectric capacitorand a sense linear capacitor, and then if the detected output voltage is high read voltage,a logic state of the cell ferroelectric capacitor is decided to a first logic state, if thedetected output voltage is low read voltage, a logic state of the cell ferroelectriccapacitor is decided to a second logic state.

申请人：KUO TUNG-CHENG,LUNG HSIANG-LAN,CHEN SHUE-SHUEN

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