LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE

专利名称：LOGIC CIRCUIT AND SEMICONDUCTOR

DEVICE

发明人：YAMAZAKI, SHUNPEI,KOYAMA,

JUN,TSUBUKU, MASASHI,NODA, KOSEI

申请号：EP10823293申请日：20100924公开号：EP2489075A4公开日：20140611

摘要：A logic circuit includes a thin film transistor having a channel formation regionformed using an oxide semiconductor, and a capacitor having terminals one of which isbrought into a floating state by turning off the thin film transistor. The oxide

semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thussubstantially serves as an insulator in a state where an electric field is not generated.Therefore, off-state current of a thin film transistor can be reduced, leading tosuppressing the leakage of electric charge stored in a capacitor, through the thin filmtransistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, theexcessive amount of current which flows in the logic circuit can be reduced through thereduction of off-state current of the thin film transistor, resulting in low powerconsumption of the logic circuit.

申请人：SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

更多信息请下载全文后查看