专利名称：Charge pump circuit, nonvolatile memory,
data processing apparatus, andmicrocomputer application system
发明人：Ryotaro Sakurai,Hideo Kasai申请号：US13181804申请日：20110713公开号：US08634255B2公开日：20140121
专利附图：
摘要：Improvement technology of a charge pump circuit is provided for avoidingdevice destruction due to electrification of an intermediate node of plural capacitors
coupled in series to form one step-up capacitor, and avoiding reduction of pump
efficiency due to leakage current which flows through a leakage path of the intermediatenode concerned. A charge pump circuit includes a step-up capacitor configured by a firstcapacitance and a second capacitance coupled in series, a capacitance driver, and aprotection circuit. The protection circuit is set at a conductive state and discharges astored charge at the series coupling node of the first capacitance and the secondcapacitance, when the step-up voltage is not generated, and the protection circuit ismaintained in a non-conductive state, when the step-up voltage is generated.
Accordingly, relaxation of the withstand voltage of the step-up capacitor is achieved, andreduction of the pump efficiency is avoided.
申请人：Ryotaro Sakurai,Hideo Kasai
地址：Kanagawa JP,Kanagawa JP
国籍：JP,JP
代理机构：Miles & Stockbridge P.C.
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