Method for producing silicon single crystal

专利名称：Method for producing silicon single crystal发明人：Koji Kitagawa,Susumu Sonokawa申请号：US09959302申请日：20011023公开号：US06506251B1公开日：20030114

专利附图：

摘要：The present invention provides a method for producing a silicon single crystalby the CZ method, in which a seed crystal having a pointed tip end or truncated pointedtip end shape as a shape of its tip end portion to be brought into contact with a siliconmelt is used, the tip end of the seed crystal is carefully brought into contact with the

silicon melt, then the seed crystal is descended at a low speed or a surface of the siliconmelt is ascended at a low speed to melt the tip end portion of the seed crystal to adesired diameter, and subsequently the seed crystal is slowly ascended or the surface ofthe silicon melt is slowly descended to grow a silicon single crystal ingot without

performing necking, wherein after the tip end of the seed crystal is carefully brought intocontact with the silicon melt, the seed crystal is maintained at that state for 5 minutes ormore to reserve heat in the seed crystal. Thus, there is provided a method for

dislocation-free seeding, which improves a success ratio in making a crystal dislocation-free and enables safe and efficient production of single crystals having a large diameterand a heavy weight at low cost.

申请人：SHIN-ETSU HANDOTAI CO., LTD.

代理机构：Oliff & Berridge, PLC

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