Nonvolatile semiconductor memory device having a r

专利名称：Nonvolatile semiconductor memory device

having a resistance variable layer andmanufacturing method thereof

发明人：Takumi Mikawa,Yoshio Kawashima,Ryoko

Miyanaga

申请号：US12810667申请日：20081226公开号：US08344345B2公开日：20130101

专利附图：

摘要：A first wire layer () including first memory wires () is connected to a second wire

layer () including second memory wires () via first contacts () penetrating a first interlayerinsulating layer (). The first wire layer () is connected to and led out to upper wires () viasecond contacts () connected to the second wire layer () and penetrating the secondinterlayer insulating layer (). The first contacts () penetrate semiconductor layer () orinsulator layer () of the second wire layer ().

申请人：Takumi Mikawa,Yoshio Kawashima,Ryoko Miyanaga

地址：Shiga JP,Osaka JP,Nara JP

国籍：JP,JP,JP

代理机构：McDermott Will & Emery LLP

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