Metal interconnect structure and fabrication metho

专利名称：Metal interconnect structure and fabrication

method thereof

发明人：Baojun Zhao申请号：US14722155申请日：20150527公开号：US09735011B2公开日：20170815

专利附图：

摘要：A method is provided for fabricating a metal interconnect structure. Themethod includes forming a reticle having a metal line pattern region and at least ascattering bar by an optical proximity correction process; and providing a semiconductor

substrate having a first dielectric layer and at least one conductive via. The method alsoincludes aligning the reticle with the semiconductor substrate with the conductive via toalign the scattering bar next to the conductive via; and forming metal line patterns on thefirst dielectric layer and a top surface of the conductive via to completely cover theconducive via.

申请人：Semiconductor Manufacturing International (Shanghai) Corporation

地址：Shanghai CN

国籍：CN

代理机构：Anova Law Group, PLLC

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