WRITE PROTECTION METHOD OF SEQUENTIAL ACCESS SEMIC

专利名称：WRITE PROTECTION METHOD OF

SEQUENTIAL ACCESS SEMICONDUCTORSTORAGE DEVICE

发明人：ASAUCHI, Noboru申请号：EP06768411.8申请日：20060726公开号：EP1921631A1公开日：20080514

专利附图：

摘要：A semiconductor device 10 sets a pass-through flag to ON when the topaddress of a write-prohibited area is passed. When a request to write data to a write-

restricted area WRA is received, the semiconductor memory device 10 determineswhether or not the pass-through flag is set to ON, and if the pass-through flag is not setto ON, the semiconductor memory device 10 executes writing of the data to the write-restricted area. On the other hand, if the pass-through flag is set to ON, the

semiconductor memory device 10 does not execute writing of the data to the write-restricted area.

申请人：Seiko Epson Corporation

地址：4-1, Nishi-shinjuku 2-chome Shinjuku-ku Tokyo 163-0811 JP

国籍：JP

代理机构：HOFFMANN EITLE

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