RJK0355DPA-00-J0资料

RJK0355DPA

Silicon N Channel Power MOS FET Power Switching

REJ03G1649-0500

Rev.5.00 Aug 05, 2008

Features

High speed switching

Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

RDS(on) = 8.2 mΩ typ. (at VGS = 10 V) • Pb-free

• • • • •

Outline

RENESAS Package code: PWSN0008DA-A(Package name: WPAK)56784G5678DDDD43211, 2, 3 Source4 Gate5, 6, 7, 8 DrainSSS123 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID(pulse)Note1 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 2 9 A Avalanche energy EAR Note 2 8.1 mJ Channel dissipation Pch Note3 25 W Channel to case thermal resistance θch-c Note3 5 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1649-0500 Rev.5.00 Aug 05, 2008 Page 1 of 6

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RJK0355DPA

Electrical Characteristics

(Ta = 25°C)

Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ± 0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA

RDS(on) — 8.2 10.7 mΩ ID = 15 A, VGS = 10 V Note4 Static drain to source on state

Note4resistance RDS(on) — 11.8 16.5 mΩ ID = 15 A, VGS = 4.5 VForward transfer admittance |yfs| — 55 — S ID = 15 A, VDS = 10 V Note4 Input capacitance Ciss — 860 — pF VDS = 10 V

VGS = 0 Output capacitance Coss — 165 — pF

f = 1 MHz Reverse transfer capacitance Crss — 53 — pF

Gate Resistance Rg — 4.2 — Ω Total gate charge Qg — 6.3 — nC VDD = 10 V

VGS = 4.5 V Gate to source charge Qgs — 2.3 — nC

ID = 30 A Gate to drain charge Qgd — 1.4 — nC

Turn-on delay time td(on) — 6.9 — ns VGS = 10 V, ID = 15 A

VDD ≅ 10 V Rise time tr — 4.1 — ns RL = 0.66 Ω Turn-off delay time td(off) — 40.8 — ns Rg = 4.7 Ω Fall time t — 5.6 — ns f

Body–drain diode forward voltage Body–drain diode reverse recovery

time

Notes: 4. Pulse test

VDF — 0.87 1.14 V IF = 30 A, VGS = 0 Note4 trr — 20 — ns IF =30 A, VGS = 0

diF/ dt = 100 A/ µs

REJ03G1649-0500 Rev.5.00 Aug 05, 2008 Page 2 of 6

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RJK0355DPA

Main Characteristics

Power vs. Temperature Derating401000Maximum Safe Operation AreaChannel Dissipation Pch (W)Drain Current ID (A)30100101 m10PW = 10 msOperation inthis area islimited by RDS(on)10 µ20s0 µss DCO101n tiorape050100150200Tc = 25°C0.11 shot Pulse0.1110100Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Typical Output Characteristics204.5 V10 V3.2 VPulse Test161282.8 V43.0 V20161284Typical Transfer CharacteristicsVDS = 10 VPulse TestDrain Current ID (A)Drain Current ID (A)25°CTc = 75°C–25°CVGS = 2.6 V0246810012345Drain to Source Voltage VDS (V)Drain to Source Saturation Voltage vs.Gate to Source VoltageDrain to Source Saturation Voltage VDS (on) (mV)200Gate to Source Voltage VGS (V)Static Drain to Source on State Resistancevs. Drain CurrentDrain to Source on State Resistance RDS (on) (mΩ)100Pulse Test30VGS = 4.5 V1010 V3Pulse Test150100ID = 10 A5 A2 A5004812162011310301003001000Gate to Source Voltage VGS (V)Drain Current ID (A) REJ03G1649-0500 Rev.5.00 Aug 05, 2008 Page 3 of 6

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RJK0355DPA

Static Drain to Source on State Resistancevs. Temperature504030ID = 2 A, 5 A, 10 A20VGS = 4.5 V100–2510 V025502 A, 5 A, 10 A75100125150100Pulse Test100003000Static Drain to Source on State Resistance RDS (on) (mΩ)Typical Capacitance vs.Drain to Source VoltageCapacitance C (pF)1000Ciss30010030VGS = 0f = 1 MHz1020CossCrss30Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Reverse Drain Current vs.Source to Drain VoltageGate to Source Voltage VGS (V)2050Dynamic Input CharacteristicsDrain to Source Voltage VDS (V)504030201000816243240VDD = 25 V10 VVDS1612840Reverse Drain Current IDR (A)ID = 30 AVGS10 V403020105 VPulse TestVDD = 25 V 10 VVGS = 0, –5 V00.40.81.21.62.0Gate Charge Qg (nc)Maximum Avalanche Energy vs.Channel Temperature DeratingRepetitive Avalanche Energy EAR (mJ)20IAP = 9 AVDD = 15 Vduty < 0.1 %Rg ≥ 50 ΩSource to Drain Voltage VSD (V)1612840255075100125150Channel Temperature Tch (°C) REJ03G1649-0500 Rev.5.00 Aug 05, 2008 Page 4 of 6

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RJK0355DPA

Normalized Transient Thermal Impedance vs. Pulse WidthNormalized Transient Thermal Impedance γs (t)3Tc = 25°C1D = 10.50.30.20.10.150.0020.010. pulseθch – c (t) = γ s (t) • θch – cθch – c = 5.0°C/W, Tc = 25°CPDMPWT100 µ1 m10 m100 m110D =PWT0.030.0110 µ1shotPulse Width PW (s)Avalanche Test CircuitAvalanche Waveform1EAR = L • IAP2 •2VDSSVDSS – VDDV(BR)DSSIAPVDDVDSVDSMonitorLIAPMonitorRgD. U. TIDVin15 V50 Ω0VDDSwitching Time Test CircuitVin MonitorRgD.U.T.RLVDS = 10 VVinVoutVin10 VVoutMonitorSwitching Time Waveform90%10%10%90%td(on)tr10%90%td(off)tf REJ03G1649-0500 Rev.5.00 Aug 05, 2008 Page 5 of 6

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RJK0355DPA

Package Dimensions

Package NameWPAKJEITA Package Code−RENESAS CodePWSN0008DA-APrevious CodeWPAKVMASS[Typ.]0.075gUnit: mm0.5 ± 0.154.21Typ1.27Typ5.1 ± 0.20.8Max3.9 ± 0.26.15.90.04Min0.7Typ0.635Max1.27Typ0.2Typ0.5 ± 0.153.8 ± 0.2+0.1-0.3+0.1-0.20.4 ± 0.060.05Max0MinStand-off4.9 ± 0.1(Ni/Pd/Au plating)Notice:The reverse pattern of die-pad support lead described above exists.

Ordering Information

Part No. Quantity

RJK0355DPA-00-J0 2500 pcs

Shipping Container

Taping

REJ03G1649-0500 Rev.5.00 Aug 05, 2008 Page 6 of 6

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Colophon .7.2