RJK0349DSP资料

RJK0349DSP

Silicon N Channel Power MOS FET Power Switching

REJ03G1659-0300

Rev.3.00 Jul 10, 2008

Features

Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

RDS(on) = 2.9 mΩ typ. (at VGS = 10 V) • Pb-free

• • • •

Outline

RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)87654234G5678DDDD1, 2, 3 Source4 Gate5, 6, 7, 8 Drain1SSS123

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 20 A Note1Drain peak current ID(pulse) 160 A Body-drain diode reverse drain current IDR 20 A Avalanche current IAP Note 2 20 A Note 2Avalanche energy EAR 40 mJ Note3Channel dissipation Pch 2.5 W Note3Channel to ambient thermal impedance θch-a 50 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Page 1 of 6

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RJK0349DSP

Electrical Characteristics

(Ta = 25°C)

Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA

RDS(on) — 2.9 3.8 mΩ ID = 10 A, VGS = 10 V Note4 Static drain to source on state

Note4resistance RDS(on) — 3.6 5.0 mΩ ID = 10 A, VGS = 4.5 VForward transfer admittance |yfs| — 55 — S ID = 10 A, VDS = 10 V Note4 Input capacitance Ciss — 3850 — pF VDS = 10 V

VGS = 0 Output capacitance Coss — 740 — pF

f = 1 MHz Reverse transfer capacitance Crss — 240 — pF

Gate Resistance Rg — 1.5 — Ω Total gate charge Qg — 25 — nC VDD = 10 V

VGS = 4.5 V Gate to source charge Qgs — 9.5 — nC

ID = 20 A Gate to drain charge Qgd — 5.3 — nC

Turn-on delay time td(on) — 11 — ns VGS = 10 V, ID = 10 A

VDD ≅ 10 V Rise time tr — 4.7 — ns RL = 1.00 Ω Turn-off delay time td(off) — 58.5 — ns Rg = 4.7 Ω Fall time t — 9.8 — ns f

Body–drain diode forward voltage Body–drain diode reverse recovery

time

Notes: 4. Pulse test

VDF — 0.78 1.02 V IF = 20 A, VGS = 0 Note4 trr — 30 — ns IF = 20 A, VGS = 0

diF/ dt = 100 A/ µs

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RJK0349DSP

Main Characteristics

Power vs. Temperature Derating4.0Maximum Safe Operation Area500Channel Dissipation Pch (W)Drain Current ID (A)3.0Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW ≤ 10 s10 µs100PW10DC O = 10 mtion (P1 ms100 µs2.0peras < Note10 5 s)1Operation in0.1W1.0this area islimited by RDS(on)Ta = 25 °C1 shot Pulse050100150200Ambient Temperature Ta (°C)0.010.10.3131030100Drain to Source Voltage VDS (V)Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)Typical Transfer Characteristics504030201025°CTc = 75°C–25°CVDS = 10 VPulse TestTypical Output Characteristics504.5 V10 V403020102.7 V3.0 V2.8 VPulse TestDrain Current ID (A)VGS = 2.6 V02468100Drain Current ID (A)12345Drain to Source Voltage VDS (V)Drain to Source Saturation Voltage vs.Gate to Source VoltageGate to Source Voltage VGS (V)Static Drain to Source on State Resistancevs. Drain CurrentDrain to Source Saturation Voltage VDS (on) (mV)200Drain to Source on State Resistance RDS (on) (mΩ)100Pulse Test30Pulse Test15010010VGS = 4.5 V310 V11ID = 20 A5010 A5 A048121620310301003001000Gate to Source Voltage VGS (V)Drain Current ID (A) REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Page 3 of 6

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RJK0349DSP

Static Drain to Source on State Resistancevs. Temperature1086420–25VGS = 4.5 V10 V5 A, 10 A, 20 AID = 5 A, 10 A, 20 APulse Test100003000CissStatic Drain to Source on State Resistance RDS (on) (mΩ)Typical Capacitance vs.Drain to Source VoltageCapacitance C (pF)100030010030100VGS = 0f = 1 MHz102030CossCrss0255075100125150Case Temperature Tc (°C)Drain to Source Voltage VDS (V)Reverse Drain Current vs.Source to Drain VoltageGate to Source Voltage VGS (V)2050Dynamic Input CharacteristicsDrain to Source Voltage VDS (V)504030VDS20100020406080840100VGSVDD = 25 V10 V1612Reverse Drain Current IDR (A)ID = 20 APulse Test10 V5 V40302010VDD = 25 V 10 VVGS = 0, –5 V00.40.81.21.62.0Gate Charge Qg (nc)Maximum Avalanche Energy vs.Channel Temperature DeratingRepetitive Avalanche Energy EAR (mJ)100IAP = 20 AVDD = 15 Vduty < 0.1 %Rg ≥ 50 ΩSource to Drain Voltage VSD (V)806040200255075100125150Channel Temperature Tch (°C) REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Page 4 of 6

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RJK0349DSP

Normalized Transient Thermal Impedance vs. Pulse WidthNormalized Transient Thermal Impedance γs (t)101D = 10.50.20.10.10.050.020.010.010.001h1spuot lseθch - f(t) = γs (t) x θch - fθch - f = 83.3°C/W, Ta = 25°CWhen using the glass epoxy board(FR4 40 x 40 x 1.6 mm)PDMPWTD =PWT0.000110 µ100 µ1 m10 m100 m110100100010000Pulse Width PW (s)Avalanche Test CircuitAvalanche Waveform1EAR = L • IAP2 •2VDSSVDSS – VDDV(BR)DSSIAPVDDVDSVDSMonitorLIAPMonitorRgD. U. TIDVin15 V50 Ω0VDDSwitching Time Test CircuitVin MonitorRgD.U.T.RLVDS = 10 VVinVoutVin10 VVoutMonitorSwitching Time Waveform90%10%10%90%td(on)tr10%90%td(off)tf

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RJK0349DSP

Package Dimensions

Package NameSOP-8JEITA Package CodeP-SOP8-3.95 × 4.9-1.27RENESAS CodePRSP0008DD-DPrevious CodeFP-8DAVMASS[Typ.]0.085g*1DF85*2EHEbpIndex mark1Ze4*3bpxMcTerminal cross section(Ni/Pd/Au plating)NOTE)1.DIMENSIONS \"*1(Nom)\" AND \"*2\"DO NOT INCLUDE MOLD FLASH.2.DIMENSION \"*3\" DOES NOTINCLUDE TRIM OFFSET.ReferenceDimension in MillimetersSymbolMinL1LDEA2A1Abpb1cc1HEexyZLL1NomMax4.905.33.95A0.100.140.251.750.340.400.460.150.200.25A1yDetail F0°8°5.806.106.201.270.250.10.750.400.601.271.08

Ordering Information

Part No. Quantity

RJK0349DSP-00-J0 2500 pcs

Shipping Container

Taping

REJ03G1659-0300 Rev.3.00 Jul 10, 2008 Page 6 of 6

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