BD536

BD534/536/538BD534/536/538Medium Power Linear and Switching Applications •Low Saturation Voltage•Complement to BD533, BD535 and BD537 respectively1TO-2201.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedSymbol VCBOParameter Collector-Base Voltage : BD534 : BD536 : BD538 Collector-Emitter Voltage : BD534 : BD536 : BD538 Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage TemperatureValue- 45- 60- 80- 45- 60- 80 - 5 - 8 - 1 50 150- 65 ~ 150UnitsVVVVVVVAAW°C°C VCEO VEBO IC IB PC TJ TSTGElectrical Characteristics TC=25°C unless otherwise notedSymbol ICBOParameter Collector Cut-off Current : BD534 : BD536 : BD538 Collector Cut-off Current : BD534 : BD536 : BD538 Emitter Cut-off Current* DC Current Gain : ALL DEVICE: BD534/536: BD538: BD534/536: BD538 hFE Groups J K: ALL DEVICE : ALL DEVICETest Condition VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = -2 V, IC = - 500mA VCE = - 5V, IC = - 10mA VCE = - 2V, IC = - 2A402015251530154020 - 0.8- 1.53 12 75100- 0.8VVVMHzMin.Typ.Max.- 100- 100- 100- 100- 100- 100 - 1UnitsµAµAµAµAµAµAmA ICES IEBO hFE hFE VCE = - 2V, IC = - 2A VCE = - 2V, IC = - 3A VCE = -2V, IC = - 2A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 0.2A IC = - 6A, IB = - 0.6A VCE = - 2V, IC = - 2A VCE = - 1V, IC = - 500mA VCE(sat) VBE(on) fT* Collector-Emitter Saturation Voltage* Base-Emitter ON Voltage Current Gain Bandwidth Product* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed©2000 Fairchild Semiconductor InternationalRev. A, February 2000

BD534/536/538Typical CharacteristicsVBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE 1000 IC = 10 IB-1VCE = -2VVBE(sat)hFE, DC CURRENT GAIN100 -0.1VCE(sat)10-0.01-0.1-1-10-0.01-0.1-1-10IC[A], COLLECTOR CURRENTIC[A], COLLECTOR CURRENTFigure 1. DC current GainFigure 2. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage -10080 70IC[A], COLLECTOR CURRENTPC[W], POWER DISSIPATION60-10IC(max)10m50s100µs DC-1403020BD534BD536BD538-1-10-100-100010002550o-0.175100125150175200VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 3. Safe Operating AreaFigure 4. Power Derating©2000 Fairchild Semiconductor InternationalRev. A, February 2000

10µs1msBD534/536/538Package DemensionsTO-2209.90 ±0.201.30 ±0.102.80 ±0.104.50 ±0.20(8.70)ø3.60 ±0.10(1.70)1.30–0.05+0.109.20 ±0.20(1.46)13.08 ±0.20(1.00)(3.00)15.90 ±0.201.27 ±0.101.52 ±0.100.80 ±0.102.54TYP[2.54 ±0.20]2.54TYP[2.54 ±0.20]10.08 ±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40 ±0.2010.00 ±0.20Dimensions in Millimeters©2000 Fairchild Semiconductor International

Rev. A, February 2000

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PRODUCT STATUS DEFINITIONSDefinition of Terms

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Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

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©2000 Fairchild Semiconductor InternationalRev. E