专利名称：Method for forming a metal cap in a
semiconductor memory device
发明人：Muralikrishnan Balakrishnan,Zailong
Bian,Gowrisankar Damarla,Hongqi Li,JinLu,Shyam Ramalingam,Xiaoyun Zhu
申请号：US14283539申请日：20140521公开号：US09577192B2公开日：20170221
专利附图：
摘要：Exemplary embodiments of the present invention are directed towards a
method for fabricating a semiconductor memory device comprising selectively depositinga material to form a cap above a recessed cell structure in order to prevent degradationof components inside the cell structure in oxidative or corrosive environments.
申请人：Sony Corporation
地址：Tokyo JP
国籍：JP
代理机构：Sheridan Ross P.C.
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