Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)0.70 at VGS = 4.5 V
N-Channel 20 0.85 at VGS = 2.5 V
1.25 at VGS = 1.8 V 1.2 at VGS = - 4.5 V
1.6 at VGS = - 2.5 V P-Channel - 20 2.7 at VGS = - 1.8 V
ID (mA)600 500 350 - 400 - 300 - 150
FEATURES
•Halogen-free Option Available
•TrenchFET® Power MOSFETs • • • •
2000 V ESD ProtectionVery Small Footprint High-Side Switching Low On-Resistance: N-Channel, 0.7 Ω P-Channel, 1.2 Ω
•Low Threshold: ± 0.8 V (Typ.) •Fast Switching Speed: 14 ns •1.8 V Operation
RoHSCOMPLIANTBENEFITS
SOT -563 SC-89 S 1 G 1 1 6 D 1 •
• • • •
Marking Code: A Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits
Low Battery Voltage Operation
2 5 G 2 S 2 APPLICATIONS •
• • •
Replace Digital Transistor, Level-Shifter Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
D 2 3 T op V iew 4 Ordering Information:Si1016X-T1-E3 (Lead (Pb)-free)Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)aPulsed Drain Currentb
Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
TA = 25 °CTA = 85 °CTA = 25 °CTA = 85 °C
VDSVGSIDIDMISPDTJ, TstgESD
450280145515370
650
380250130
2000
- 450280145
- 55 to 150 48535020
± 6
- 390- 280
- 650
- 380250130
mW°CV
- 370- 265
mA
P-Channel
Unit V
- 20
Parameter Symbol 5 sSteady State 5 sSteady State
Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168S-80427-Rev. D, 03-Mar-08www.vishay.com
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Si1016X
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Static
Gate Threshold VoltageGate Body Leakage
VGS(th) IGSS
VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 16 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 °C VDS = - 16 V, VGS = 0 V, TJ = 85 °C
On State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V VDS = - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 600 mA VGS = - 4.5 V, ID = - 350 mA
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 500 mA VGS = - 2.5 V, ID = - 300 mA VGS = 1.8 V, ID = 350 mA VGS = - 1.8 V, ID = - 150 mA
Forward TransconductanceaDiode Forward VoltageaDynamicbTotal Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Time
Qg Qgs Qgd tON
N-Ch 750 N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
P-ChannelT
VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA N-Channel
VDD = 10 V, RL = 47 Ω
ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω
P-Channel
VDD = - 10 V, RL = 47 Ω
ID ≅ - 200 mA, VGEN = - 4.5 V, RG = 10 Ω
P-Ch 1500 N-Ch 75 P-Ch T150 N-Ch 225 P-Ch 450 N-Ch 5 P-Ch 5 N-Ch P-Ch
25 35
ns
pC
gfs VSD
VDS = 10 V, ID = 400 mA VDS= - 10 V, ID = - 250 mA IS = 150 mA, VGS = 0 V IS = - 150 mA, VGS = 0 V
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
0.45 1- 0.45
± 0.5 ± 1.0
- 1± 1.0 ± 2.0
VµA
est Conditions Min.
yp.
Max.
Unit 0.3 100 nA
- 0.3 - 100 5 µA
- 5700- 700
mA
0.41 0.70 0.80 1.2 0.53 0.85 Ω
1.20 1.6 0.70 1.25 1.80 2.7 1.0 0.4 S
0.8 1.2 V
- 0.8 - 1.2
Turn-Off TimetOFF
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
www.vishay.com2Document Number: 71168S-80427-Rev. D, 03-Mar-08
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Si1016X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.0 1200 T = - 55 °C C 25 °C800 125 °C600 0.8 ID- Drain Current (A)1000 V = 5 thru 1.8 V GS ID - Drain Current (mA)0.6 0.4 400 0.2 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0VDS - Drain-to-Source Voltage (V)200 0 0.0 0.5 1.0 1.5 2.0 2.5VGS - Gate-to-Source Voltage (V)Output Characteristics4.0 100 Transfer CharacteristicsRDS(on)- On-Resistance (Ω)3.2 80 C is s V = 0 V GS f = 1 MHz C - Capacitance (pF)2.4 60 1.6 VGS = 1.8 V0.8 VGS = 2.5 VVGS = 4.5 V0 200 400 600 800 1000 ID - Drain Current (mA)40 C os s C rss 0 0 4 8 12 16 20VDS - Drain-to-Source Voltage (V)20 0.0 On-Resistance vs. Drain Current
5 V = 10 V DS = 250 mA I D 4 RDS(on)- On-Resistance Capacitance
1.60 VGS- Gate-to-Source Voltage (V)1.40 VGS = 4.5 VID = 350 mA(Normalized)3 1.20 VGS = 1.8 VID = 150 mA1.00 2 1 0.80 0 0.0 0.2 0.4 0.6 0.8Qg - Total Gate Charge (nC)0.60 - 50 - 25 0 2 5 5 0 7 5 100 125 TJ - Junction Temperature (°C)Gate ChargeOn-Resistance vs. Junction Temperature
Document Number: 71168
S-80427-Rev. D, 03-Mar-08www.vishay.com
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Si1016XVishay SiliconixN-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted1000 T = 125 °C J RDS(on)- On-Resistance (Ω)4 I = 350 mA D 3 I = 200 mA D 2 5 IS- Source Current (mA)100 TJ = 25 °C10 T = 50 °C J 1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4VSD - Source-to-Drain Voltage (V)0 0 1 2 3 4 5 6 V - Gate-to-Source V oltage (V) GS Source-Drain Diode Forward Voltage0.33.0On-Resistance vs. Gate-to-Source Voltage0.2VGS(th)Variance (V)2.5ID = 0.25 mA0.1IGSS - (μA)2.0 0.01.5- 0.11.0VGS = 4.5 V- 0.20.5- 0.3- 50- 2502550751001250.0- 50- 250255075100125TJ - Temperature (°C)TJ - Temperature (°C)Threshold Voltage Variance vs. TemperatureBVGSS - Gate-to-Source Breakdown Voltage (V)IGSS vs. Temperature76543210- 50- 250255075100125TJ - Temperature (°C)BVGSS vs. Temperaturewww.vishay.com4Document Number: 71168S-80427-Rev. D, 03-Mar-08
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Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1.0 V = 5 thru 3 V GS 0.8 2.5 V800 1000 T = - 55 °C J 25 °C0.6 2 V0.4 1.8 V0.2 ID- Drain Current (mA)ID- Drain Current (A)600 125 °C 400 200 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V)0 0.0 0.5 1.0 1.5 2.0 2.5 3.0VGS - Gate-to-Source Voltage (V)Output Characteristics
4.0 V = 1.8 V GS C - Capacitance (pF)Transfer Characteristics
120 V = 0 V GS f = 1 MHz RDS(on)- On-Resistance (Ω)3.2 100 C is s 80 2.4 V = 2.5 V GS 1.6 V = 4.5 V GS 0.8 60 40 C os s 20 Crss0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V)0.0 0 200 400 600 800 1000ID - Drain Current (mA)0 On-Resistance vs. Drain Current
5 V = 10 V DS = 250 mA I D 4 RDS(on)- On-Resistance (Ω)(Normalized)1.41.6CapacitanceVGS- Gate-to-Source Voltage (V)VGS = 4.5 VID = 350 mA1.2VGS = 1.8 VID = 150 mA3 2 1.01 0.80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6Qg - Total Gate Charge (nC)0.6- 50- 250255075100125TJ -Junction Temperature (°C) Gate ChargeOn-Resistance vs. Junction TemperatureDocument Number: 71168S-80427-Rev. D, 03-Mar-08www.vishay.com
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Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1000T = 125 °C J 5 100 T = 25 °C J T = - 55 °C J 10 RDS(on)- On-Resistance (Ω)4 IS - Source Current (mA)3 I = 350 mA D 2 I = 200 mA D 1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4VSD - Source-to-Drain Voltage (V)0 0123456V - Gate-to-Source Voltage (V)GS Source-Drain Diode Forward Voltage0.33.0On-Resistance vs. Gate-to-Source Voltage
0.2VGS(th)Variance (V)2.5ID = 0.25 mA0.1IGSS - (µA)2.0VGS = 4.5 V 0.01.5- 0.11.0- 0.20.5- 0.3- 50- 250255075TJ - Temperature (°C)1001250.0- 50- 250255075TJ - Temperature (°C)100125Threshold Voltage Variance vs. Temperature
BVGSS - Gate-to-Source Breakdown Voltage (V)IGSS vs. Temperature
76543210- 50- 250255075100125TJ - Temperature (°C)BVGSS vs. Temperaturewww.vishay.com6Document Number: 71168S-80427-Rev. D, 03-Mar-08
元器件交易网www.cecb2b.com
Si1016X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2 1 Duty Cycle = 0.5 Normalized Eff ective Tr ansient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: P DM t 1 t 2 1. Duty Cycle, D = t 1 t 2 = 500 °C/W2. Per Unit Base = R th JA Single Pulse 0.01 -4 10 -3 10 -2 10 -1 10 Square Wave Pulse Duration (s)(t)3. T JM - TA = PDMZthJA4. Surface Mounted 1 1 0 600 100 Normalized Thermal Transient Impedance, Junction-to-AmbientVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?71168.
Document Number: 71168S-80427-Rev. D, 03-Mar-08www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000Revision: 18-Jul-08
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