2SC3420三极管

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126C Plastic-Encapsulate Transistors ==

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2SC3420 TRANSISTOR (NPN)

FEATURES

z High DC Current Gain z Low Saturation Voltage

z High Collector Power Dissipation

TO – 126C 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit VCBO VCEO VEBO IC PC RθJA Tj Tstg

Collector-Base Voltage

Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature

50 V

20 V

8 V

5 A

1.5 W

83 ℃/W

150 ℃

-55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain

Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency

Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat)

VBE

Test conditions Min Typ MaxUnit

IC=100µA,IE0 50 V IC=10mA,IB0 20 V IE=100µA,IC0 8 V

VCB=40V,IE0 0.1 μA VCE=2V, IC0.5A

140 600 VEB=8V,IC0 0.1 μA

VCE=2V, IC4A 70 IC=4A,IB=0.1A 1 V VCB=10V,IE=0, f=1MHz VCE=2V,IC=0.5A

40 100

pF MHz

VCE=2V, IC4A 1.5 V Cob fT

CLASSIFICATION OF hFE(1)

RANK Y RANGE

GR BL 140-240 200-400 300-600

C,Aug,2012

Typical Characteristics2SC3420Static Characteristic 1500

5.0mA COMMON4.5mAEMITTER)TAa=25℃m4.0mA( CI 10003.5mA TNE3.0mARRU2.5mA C R2.0mAOT500CE1.5mALLOC1.0mAIB=0.5mA00123456COLLECTOR-EMITTER VOLTAGE VCE (V)V1000BEsat —— ICβ=40NO800

I)TVARmTa=25℃( U T tAasE600

SB RV E TE TIGMAET400

Ta=100℃-LEOSVAB200

00.111010010005000COLLECTOR CURRENT IC (mA)fT —— I300C)zHM( Tf 100

YCNEUQE RF NOITISNARTVCE=2VTa=25 oC10406080COLLECTOR CURRENT IC (mA)VBE —— I C1000

A)m( CI Ta=100 oC TN100

ERRUC R10

OTCTa=25℃ELLOC1

VCE=2V0.10.2

0.4

0.6

0.8

1.0

1.2

BASE-EMITTER VOLTAGE VBE(V)

h600FE —— ICVCE= 2V500EFh oNI400Ta=100 CAG TNER300 RUC CD200Toa=25 C10001010010005000COLLECTOR CURRENT IC (mA)VCEsat —— I C300NOβ=40ITAR)UVTmA( S t aRsE200ECTVT I MEEG-RA OTLTCOEVL100LOCTa=100℃Ta=25℃011010010005000COLLECTOR CURRENT IC (mA)Cob / Cib —— V V1000CB /EBf=1MHzCibIE=0 / IC=0T)a=25 oCFp( C ECNA100T ICAPACobC 100.111020REVERSE VOLTAGE V (V)P2.0c —— T aNOITAPIS1.5SID) RW( E W cOP P R 1.0 OTCELLOC0.50.00

25

50

75

100

125

150

AMBIENT TEMPERATURE Ta (℃)

C,Aug,2012

【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cn

SymbolAA1bb1cDEee1LL1PΦ1Φ2Dimensions In MillimetersMin.Max.3.0003.4001.8002.2000.6600.8601.1701.3700.4500.6007.8008.20010.80011.2002.280 TYP.4.4604.66015.30015.7001.3001.5004.0404.2402.7002.9003.1003.300Dimensions In InchesMin.Max.0.1180.1340.0710.0870.0260.0340.0460.0540.0180.0240.3070.3230.4250.4410.090 TYP.0.1760.1830.6020.6180.0510.0590.1590.1670.1060.1140.1220.130【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cn【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cn

Inner Box: 240 mm×165mm×９５mm

Label on the Inner Box

Stamp “EMPTY” on the empty box

Seal the box with the tape

QA Label

Outer Box: 525 mm× 360mm× 262mm

Label on the Outer Box