专利名称：High Frequency Integrated Circuit发明人：Kazumasa Kohama申请号：US11663966申请日：20051012
公开号：US20080043388A1公开日：20080221
专利附图：
摘要：A high frequency integrated circuit equipped with an electrostatic protectiondevice provided with a field effect transistor as an electrostatic protection device at theinput and output of a high frequency integrated circuit, having excellent high frequencycharacteristics, and making an ESD withstand voltage large, having a high frequency circuit
having input/output terminals and an enhancement type field effect transistor formed ona compound semiconductor substrate and provided in said high frequency circuit, havingone terminal of the input/output terminals connected to the input/output terminals ofthe high frequency circuit, having the other terminal connected to a first referencepotential, and having a gate connected via a resistor to a second reference potential, andmaking an impedance of the field effect transistor low for ESD protection when noise or ahigh voltage pulse is applied from the input/output terminals.
申请人：Kazumasa Kohama
地址：Kanagawa JP
国籍：JP
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