Power MOSFETs
Q-Class
N-Channel Enhancement ModeAvalanche Rated,Low Qg, High dv/dt
SymbolVDSSVDGRVGSVGSMID25IDMIAREAREASdv/dtPDTJTJMTstgTLMdFCWeight
1.6 mm (0.063 in) from case for 10 sMounting torque TO-247Mounting Force TO-268
TO-247 TO-268Test Conditions
TJ= 25°C to 150°C
TJ= 25°C to 150°C; RGS = 1 MΩContinuousTransient
TC= 25°C
TC= 25°C, pulse width limited by TJMTC= 25°CTC= 25°CTC= 25°CIS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,TJ≤ 150°C, RG = 2 ΩTC= 25°C
IXFH23N80QIXFT23N80Q
VDSS= 800 V
= 23 AID25
RDS(on)= 0.42 Ω
trr ≤ 250 ns
Maximum Ratings
800800±30±40239223451.55500
-55 ... +150
150
-55 ... +150
300
VVVVAAAmJ JV/nsW°C°C°C°C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
GSG = GateS = Source
TAB = Drain
Features
zzz
1.13/10Nm/lb.in.
z
20...120/4.5...27N/lb
64
g g
zz
IXYS advanced low Qg processInternational standard packages Epoxy meets UL 94 V-0 flammabilityclassificationLow RDS (on) low Qg
Avalanche energy and current ratedFast intrinsic rectifier
Advantages
zz
SymbolTest Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.typ.max.
8002.5
4.5±100
TJ = 25°CTJ = 125°C
2510.42
VVnAµAmAΩ
z
Easy to mountSpace savingsHigh power density
VDSSVGS(th)IGSSIDSSRDS(on)
VGS= 0 V, ID = 250 µAVDS= VGS, ID = 3 mAVGS= ±30 VDC, VDS = 0VDS= VDSSVGS= 0 V
VGS= 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
DS99060A(02/04)
IXFH23N80QIXFT23N80QSymbolTest ConditionsCharacteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.18264900VGS= 0 V, VDS = 25 V, f = 1 MHz50013028VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25RG = 1.5 Ω (External),277414130VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID2526550.25TO-2470.25S 1 2 3 TO-247 AD (IXFH) OutlinegfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCKVDS= 10 V; ID = 0.5 • ID25, pulse testpFpFpFnsnsnsnsnCnCnCK/WK/WDim.AA1A2bb1b2CDEeLL1∅PQRSMillimeterMin.Max.4.72.22.21.01.652.87.420.8015.755.2019.813.555.894.326.155.32.542.61.42.133.12.821.4616.265.7220.324.503.656.405.49BSCTerminals:1 - Gate2 - Drain3 - SourceTab - DrainInchesMin.Max..185.087.059.040.065.113.016.819.6100.205.780.1400.232.170242.209.102.098.055.084.123.031.845.6400.225.800.177.1440.252.216BSCSource-Drain DiodeSymbolISISMVSDtrrQRMIRMTest ConditionsVGS= 0 VCharacteristic Values(TJ = 25°C, unless otherwise specified)min.typ. max.23921.5250AAV TO-268 (IXFT) OutlineRepetitive; pulse width limited by TJMIF = IS, VGS = 0 V,Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %IF = IS -di/dt = 100 A/µs, VR = 100 Vns1µC9 AIXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B14,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343Fig. 1. Output Characteristics @ 25ºC22201816VGS = 10V 7V 6V454035Fig. 2. Extended Output Characteristics @ 25ºCVGS = 10V 6VI D - Amperes141210864200123456789104.5V5VI D - Amperes3025201510500369121518212427305V4.5V5.5VVD S - VoltsFig. 3. Output Characteristics @ 125ºC22201816VGS = 10V 6V 2.82.5VGS = 10VVD S - VoltsFig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction TemperatureR D S ( o n ) - Normalized2.21.91.61.310.70.4ID = 23AID = 11.5AI D - Amperes14121086420024681012145V4.5V16182022-50-250255075100125150VD S - VoltsFig. 5. RDS(on) Normalized to 2.82.6TJ - Degrees CentigradeFig. 6. Drain Current vs. CaseTemperature27240.5 ID25 Value vs. IDVGS = 10VTJ = 125ºCR D S ( o n ) - Normalized2.42.221.81.61.41.210.805101521I D - AmperesTJ = 25ºC1815129630I D - Amperes20253035404550-50-25TC - Degrees Centigrade0255075100125150© 2004 IXYS All rights reserved
Fig. 7. Input Admittance353025201510503.544.555.56 TJ = 125ºC 25ºC -40ºC60Fig. 8. Transconductance 50TJ = -40ºC 25ºC 125ºCg f s - SiemensI D - Amperes4030201000510152025303540VG S - VoltsFig. 9. Source Current vs. Source-To-Drain Voltage7060501098VDS = 400VID = 11.5AIG = 10mAI D - AmperesFig. 10. Gate ChargeI S - Amperes7VG S - VoltsTJ = 25ºC0.80.911.11.24030201000.40.50.60.76543210020406080100120140TJ = 125ºCVS D - VoltsFig. 11. Capacitance10000Q G - nanoCoulombsCapacitance - picoFaradsCiss1000Coss100Crssf = 1MHz100510152025303540VD S - VoltsIXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B14,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 12. MaximumTransientThermal Resistance1.00R( t h ) J C - ºC / W0.100.011101001000Pulse Width - milliseconds© 2004 IXYS All rights reserved
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