Heterojunction semiconductor devices

专利名称：Heterojunction semiconductor devices发明人：Mimura, Takashi申请号：EP80304697申请日：19801223公开号：EP0033037A3公开日：19831130

专利附图：

摘要：A thin electron accumulation layer is generated along a heterojunction betweentwo different semiconductor layers (21,22) each of which has a different electron affinityfrom the other. This electron accumulation suffers a less ionized-impurity scattering,because its thickness does not exceed the spread of an electron wave. A channelconstituted by this electron accumulation enjoys an excellent magnitude of electronmobility particularly at cryogenic temperature. A layer configuration fabricated with two

different semiconductors (21, 22) having different electron affinity from, and similarcrystal lattice coefficient with, each other and interleaving a single heterojunction thereinis effective to improve the electron mobility. Such a layer configuration can be employedfor production of an active semiconductor device with high electron mobility, resulting ina high switching speed. Such semi- conductor devices, including an FET, CCD et al, exhibitan excellent transfer conductance Gm, and may be constructed in a number of ways.

申请人：FUJITSU LIMITED

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